Plasma Processing Waveform Correction for Etching Uniformity
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Solution Overview
Problem
Conventional plasma processing apparatuses face issues with waveform distortion due to harmonic distortion, leading to non-uniform plasma and etching rate variations between different apparatuses, as fixed impedance elements are insufficient in addressing varying distortion levels.
Innovation Solution
A plasma processing apparatus equipped with a high frequency generation unit, distortion component extraction unit, and waveform correction unit, which generates high frequency using waveform data with a set frequency component and corrects the waveform by combining an antiphase component with the distortion component to suppress waveform distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an impedance element with fixed impedance is used to suppress harmonic distortion, then waveform distortion of the high frequency is reduced, but the magnitude of remaining harmonic distortion varies between plasma processing apparatuses due to path state variations
Solution Approach 1:
The patent applies dynamics by making the impedance of the impedance element adjustable rather than fixed. The control unit dynamically changes the impedance value based on the measured magnitude of harmonic distortion, allowing the system to adapt to different apparatus configurations and path states while maintaining consistent harmonic distortion suppression across all plasma processing apparatuses
Solution Approach 2:
The patent implements feedback by measuring the magnitude of harmonic distortion occurring on the transmission path and using this measurement to control the impedance element. The control unit adjusts the impedance based on the measured distortion level, creating a closed-loop system that automatically compensates for variations between different apparatuses and maintains consistent etching uniformity
2Device complexity
If the impedance of the impedance element is fixed, then the device complexity is reduced, but it becomes difficult to sufficiently remove harmonic distortion when the path state varies between apparatuses
Solution Approach 1:
The patent applies self-service by enabling the impedance element to automatically adjust its own impedance value based on measured harmonic distortion levels. The control unit modifies the impedance element's impedance without requiring manual intervention or complex external adjustment mechanisms, allowing the system to self-optimize for different apparatus configurations while maintaining reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the difference in etching rates between plasma processing apparatuses by improving plasma uniformity and maintaining consistent etching rates across different systems.
Implementation Method 1
a high frequency generation unit that generates a high frequency by using waveform data including a set frequency component having a predetermined frequency
Implementation Method 2
a distortion component extraction unit that extracts a distortion component given to the high frequency in a path for transmitting the high frequency generated by the high frequency generation unit to the electrode
Implementation Method 3
a waveform correction unit that corrects the waveform data by combining an antiphase component obtained by inverting a phase of the distortion component and the set frequency component of the waveform data used for generation of the high frequency
Implementation Method 4
a plasma is generated in a processing chamber by applying a high frequency for plasma generation to an electrode provided in the processing chamber
Data Source
AI summary
A plasma processing apparatus includes an electrode to which a high frequency for plasma generation is applied and which serves as a mounting table for a target object. The plasma processing apparatus further includes a high frequency generation unit, a distortion component extraction unit and a waveform correction unit. The high frequency generation unit generates the high frequency by using waveform data including a set frequency component having a predetermined frequency. The distortion component extraction unit extracts a distortion component given to the high frequency in a path for transmitting the high frequency generated by the high frequency generation unit to the electrode. The waveform correction unit corrects the waveform data by combining an antiphase component obtained by inverting a phase of the distortion component and the set frequency component of the waveform data used for generation of the high frequency.