Plasmon-Assisted CVD for Sub-Nanometer Film Deposition

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Solution Overview

Problem

Conventional methods for forming micro and nanostructures, such as chemical vapor deposition, face limitations in achieving smaller feature sizes and higher circuit densities due to process limitations and inefficiencies, particularly in terms of power consumption and spatial control during the deposition of films in integrated circuit fabrication.

Innovation Solution

The use of plasmon-assisted chemical vapor deposition techniques, which involve selecting frequencies of electromagnetic radiation to control the temperature of nanometer-sized particles, allowing for localized heating and precise control over material synthesis, using simpler light sources and conventional optics to achieve higher spatial and temporal control over the deposition process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional chemical vapor deposition is used to deposit films, then high-throughput deposition is achieved, but line widths cannot be less than a predetermined amount due to diffraction limit of light and process limitations

Engineering Contradiction:
Improveline widthVSAvoiddeposition throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies local quality by using metallic nanoparticles as localized heating sources that convert electromagnetic radiation into heat at specific positions on the substrate. This creates spatially non-uniform temperature distribution, enabling precise control of deposition location and line width while maintaining overall process throughput. The nanoparticles act as localized reaction zones rather than heating the entire substrate uniformly.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the temperature parameter locally by utilizing plasmon resonance heating of metallic nanoparticles. By controlling the concentration, size, and distribution of nanoparticles, the local temperature can be precisely adjusted to enable deposition at specific locations. This parameter control allows overcoming the diffraction limit by using nanoparticle-mediated localized heating rather than conventional uniform thermal or photonic approaches.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If laser assisted CVD is used to achieve localized heating and high growth rates, then line widths can be controlled, but high power laser sources are required which are not efficient and costly

Engineering Contradiction:
Improvespatial controlVSAvoidpower consumption
Core Design Contradiction:
Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent introduces metallic nanoparticles as intermediary agents that mediate between electromagnetic radiation and the substrate. These nanoparticles absorb electromagnetic radiation and convert it to heat through plasmon resonance, acting as thermal intermediaries. This approach is more efficient than direct laser heating because the nanoparticles have high absorption cross-sections and can be distributed uniformly, reducing the required radiation power while maintaining spatial control.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces the mechanical/optical system of focused laser beams with an electromagnetic field that excites plasmon resonance in nanoparticles. Instead of using high-power focused lasers to achieve localized heating, the system uses electromagnetic radiation at specific frequencies that resonantly excite the nanoparticles, converting optical energy to thermal energy more efficiently. This substitution reduces power consumption and eliminates the need for complex high-power laser focusing systems.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If conventional CVD processes are used, then deposition can occur, but film quality degrades as line widths become smaller due to process limitations

Engineering Contradiction:
Improveline widthVSAvoidfilm quality
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies local quality by creating spatially non-uniform temperature fields through nanoparticle distribution. Each nanoparticle creates a localized high-temperature zone that maintains optimal conditions for high-quality film deposition. This localized thermal environment ensures that even at sub-micron line widths, the deposition occurs under controlled conditions that preserve film quality, preventing the degradation that occurs in conventional uniform heating processes.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies preliminary action by pre-distributing metallic nanoparticles on the substrate before the deposition process. These nanoparticles are positioned in advance to define the desired pattern and line widths. During deposition, the nanoparticles immediately begin localized heating, ensuring that the chemical reactions occur precisely where needed from the start. This preliminary positioning eliminates the need for iterative adjustments and maintains film quality at small dimensions.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of films with line widths less than a micron and potentially less than a nanometer, improving device yields and process integration, while reducing power consumption and maintaining compatibility with conventional technology, thus overcoming the limitations of traditional CVD methods.

Implementation Method 1

exciting a portion of the selected material using an electromagnetic source having a predetermined frequency at a plasmon resonant frequency of the selected material to cause an increase in thermal energy of the selected material

Methodology Applied
Scientific EffectPlasmon resonance: Resonance

Data Source

PatentUS7504136B2Method and system for forming a film of material using plasmon assisted chemical reactions
Publication Date: 2009.03.17 CALIFORNIA INST OF TECH
  • US7504136B2 patent drawing
  • US7504136B2 patent drawing
  • US7504136B2 patent drawing

AI summary

A method for forming a film of material using chemical vapor deposition. The method includes providing a substrate comprising a pattern of at least one metallic nanostructure, which is made of a selected material. The method includes determining a plasmon resonant frequency of the selected material of the nanostructure and exciting a portion of the selected material using an electromagnetic source having a predetermined frequency at the plasmon resonant frequency to cause an increase in thermal energy of the selected material. The method includes applying one or more chemical precursors overlying the substrate including the selected material excited at the plasmon resonant frequency and causing selective deposition of a film overlying at least the portion of the selected material.