Semiconductor Light Emitter Plasmon Layers for Uniform LED Output
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Solution Overview
Problem
Current semiconductor light emitting diodes (LEDs) lack research and application of surface plasmon effects, which are necessary to improve performance metrics such as brightness, electro-static discharge resistance, and aging.
Innovation Solution
Incorporating a surface plasmon excited layer and a surface plasmon excitation layer into the semiconductor light emitting element, utilizing a superlattice structure and metal materials to enhance hole injection efficiency, diffusion capability, and quantum efficiency, while improving light emitting uniformity and anti-ESD capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional LED structure is used, then manufacturing is simple, but quantum efficiency and light emitting uniformity are insufficient
Solution Approach 1:
The patent implements a nested multi-layer structure where the surface plasmon excited layer is positioned between the quantum well layer and p-type semiconductor layer, and the surface plasmon excitation layer is positioned on the p-type semiconductor layer. This nested arrangement integrates multiple functional layers within the LED structure to enhance quantum efficiency and light emitting uniformity through surface plasmon effects, while maintaining a systematic and organized structural configuration.
Solution Approach 2:
The patent employs composite material structures including the surface plasmon excited layer and surface plasmon excitation layer, which are composed of specific materials designed to generate and utilize surface plasmon effects. These composite material layers work synergistically with the conventional LED layers (n-type semiconductor layer, quantum well layer, p-type semiconductor layer) to improve quantum efficiency and light emitting uniformity without fundamentally altering the basic LED architecture.
2Reliability
If conventional LED structure is used, then device complexity is low, but anti-ESD capability is insufficient
Solution Approach 1:
The patent implements a nested multi-layer structure where the surface plasmon excited layer is positioned between the quantum well layer and p-type semiconductor layer, and the surface plasmon excitation layer is positioned on the p-type semiconductor layer. This nested arrangement integrates multiple functional layers within the LED structure to enhance quantum efficiency and light emitting uniformity through surface plasmon effects, while maintaining a systematic and organized structural configuration.
Solution Approach 2:
The patent employs composite material structures including the surface plasmon excited layer and surface plasmon excitation layer, which are composed of specific materials designed to generate and utilize surface plasmon effects. These composite material layers work synergistically with the conventional LED layers (n-type semiconductor layer, quantum well layer, p-type semiconductor layer) to improve quantum efficiency and light emitting uniformity without fundamentally altering the basic LED architecture.
3Reliability
If surface plasmon excited layer and surface plasmon excitation layer are added, then quantum efficiency and light emitting uniformity are improved, but device complexity increases
Solution Approach 1:
The patent implements a nested multi-layer structure where the surface plasmon excited layer is positioned between the quantum well layer and p-type semiconductor layer, and the surface plasmon excitation layer is positioned on the p-type semiconductor layer. This nested arrangement integrates multiple functional layers within the LED structure to enhance quantum efficiency and light emitting uniformity through surface plasmon effects, while maintaining a systematic and organized structural configuration.
Solution Approach 2:
The patent employs composite material structures including the surface plasmon excited layer and surface plasmon excitation layer, which are composed of specific materials designed to generate and utilize surface plasmon effects. These composite material layers work synergistically with the conventional LED layers (n-type semiconductor layer, quantum well layer, p-type semiconductor layer) to improve quantum efficiency and light emitting uniformity without fundamentally altering the basic LED architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances longitudinal hole injection efficiency, transverse hole diffusion, and quantum efficiency, leading to improved light emitting uniformity and anti-ESD capabilities of the semiconductor light emitting element.
Implementation Method 1
utilize surface plasmon effect to improve a transverse spreading capability and longitudinal injection efficiency of holes, and further improve quantum efficiency, light emitting uniformity and an anti-ESD capability of the semiconductor light emitting element
Data Source
AI summary
A semiconductor light emitting element and a manufacture method thereof are provided. The semiconductor light emitting element includes: a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer being arranged sequentially from bottom to top, and further includes a surface plasmon excition layer being arranged on the p-type semiconductor layer and a surface plasmon excited layer being arranged between the quantum well layer and the p-type semiconductor layer, or the surface plasmon excitation layer being arranged between the p-type semiconductor layer and the surface plasmon excitation layer, or the surface plasmon excitation layers being arranged respectively between the quantum well layer and the p-type semiconductor layer and between the p-type semiconductor layer and the surface plasmon excitation layer. The quantum efficiency of the semiconductor light emitting element is improved, the light emitting uniformity and the anti-ESD capability of the semiconductor light emitting element are enhanced.