Plasmon-Coupled Surface States for Low-Power Terahertz Conversion

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Solution Overview

Problem

High power input and low conversion efficiency of terahertz sources remain a challenge in exploiting terahertz applications, limiting the potential uses of terahertz technology.

Innovation Solution

Optical wavelength conversion devices utilizing plasmon-coupled surface states in semiconductor substrates with built-in electric fields, such as those generated by semiconductor surface states, Schottky contacts, or semiconductor heterostructures, to convert optical wavelengths to terahertz wavelengths without external electrical power sources, employing nanoantenna arrays and conductive layers with specific geometries to enhance efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional terahertz sources are used, then terahertz generation is achieved, but high power input and low conversion efficiency are required

Engineering Contradiction:
Improveconversion efficiencyVSAvoidpower input
Core Design Contradiction:
Loss of energyVSUse of energy by moving object

Solution Approach 1:

The patent changes the fundamental operating parameters by using plasmon-coupled surface states in semiconductor substrates with built-in electric fields, enabling direct optical-to-terahertz wavelength conversion. This approach achieves conversion efficiencies exceeding nonlinear optical methods by several orders of magnitude while reducing optical power requirements, directly resolving the energy efficiency contradiction

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces plasmon-coupled surface states as an intermediary mechanism between optical input and terahertz output. The semiconductor substrate with built-in electric field (from surface states, Schottky contacts, or heterostructures) acts as a mediator that enables efficient wavelength conversion without requiring high power input or external electrical power sources

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If external electrical power sources are used for wavelength conversion, then conversion process is simplified, but device complexity and power requirements increase

Engineering Contradiction:
Improvepower source requirementsVSAvoidoptical power requirements
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The patent implements self-service by utilizing built-in electric fields within the semiconductor substrate that are generated internally by surface states, Schottky contacts, or heterostructures. This eliminates the need for external electrical power sources, simplifying the device while reducing overall power requirements through the plasmon-coupled conversion mechanism

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Achieves high conversion efficiency, exceeding nonlinear optical methods by several orders of magnitude, enabling compact, reliable, and efficient terahertz generation with reduced optical power requirements, suitable for applications in sensing, imaging, and communication.

Implementation Method 1

optical wavelength conversion to any of a number of regions of the electromagnetic spectrum ranging from microwave to infrared regimes through plasmon-coupled surface states

Methodology Applied
Scientific EffectPlasmon-coupled surface states:

Implementation Method 2

the semiconductor substrate comprises at least one region that has a built-in electric field

Methodology Applied
Scientific EffectBuilt-in electric field: Electric Field

Implementation Method 3

the at least one electrode is capable of bending incident optical light to couple with the at least one region that has the built-in electric field

Methodology Applied
Scientific EffectLight bending:

Implementation Method 4

the built-in electric field is generated by a source selected from the group consisting of: at least one semiconductor surface state, a Schottky contact, and a semiconductor heterostructure

Methodology Applied
Scientific EffectSchottky contact effect:

Implementation Method 5

the built-in electric field is generated by a source selected from the group consisting of: at least one semiconductor surface state, a Schottky contact, and a semiconductor heterostructure

Methodology Applied
Scientific EffectHeterostructure effect:

Data Source

PatentUS12498615B2Systems and methods for wavelength conversion through plasmon-coupled surface states
Publication Date: 2025.12.16 RGT UNIV OF CALIFORNIA
  • US12498615B2 patent drawing
  • US12498615B2 patent drawing
  • US12498615B2 patent drawing

AI summary

Systems and methods for performing wavelength conversion via plasmon-coupled surface states are described that can be used for optical wavelength conversion to different parts of the electromagnetic spectrum ranging from microwave to infrared regimes in both pulsed and continuous wave operation.