Plasmonic Metal-Graphene Heterostructures Without Transfer Damage

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Solution Overview

Problem

Conventional methods for fabricating plasmonic metal nanostructures/graphene are complex, prone to contamination, and damage during graphene transfer, leading to degraded device performance and instability due to unpassivated reactive metal interfaces.

Innovation Solution

A FCCVD-based method that forms plasmonic metal/graphene heterostructures in situ by heating organometallic precursors to deposit a metal layer and simultaneously grow a monolayer of graphene and carbon-encapsulated metal nanostructures, eliminating the need for graphene transfer and providing a stable, encapsulated interface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional methods are used to fabricate plasmonic metal nanostructures/graphene, then the fabrication process can be performed with existing techniques, but the process becomes complex and prone to contamination during graphene transfer

Engineering Contradiction:
Improvefabrication processVSAvoidfabrication process
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent combines the metal nanostructure formation and graphene growth into a single in-situ process. The organometallic precursor serves dual purposes: depositing the metal layer and providing carbon for graphene formation. This merging eliminates the need for separate graphene transfer steps, reducing process complexity and contamination risks while maintaining manufacturability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The organometallic complex acts as an intermediary that simultaneously provides both metal atoms for nanostructure formation and carbon sources for graphene growth. This intermediary approach allows both materials to be formed in-situ without requiring separate deposition and transfer processes, simplifying the overall fabrication workflow.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If conventional graphene transfer methods are used, then graphene can be deposited on metal surfaces, but damage occurs during transfer leading to degraded device performance

Engineering Contradiction:
Improvegraphene qualityVSAvoiddevice performance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent performs preliminary action by growing graphene directly in-situ on the metal surface during the same process that forms the metal nanostructures. This eliminates subsequent transfer operations that would cause mechanical damage. The graphene and metal structures are formed together in a controlled environment, ensuring high quality and preventing degradation.

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If reactive metal interfaces are exposed without passivation, then the metal layer can be formed, but instability occurs due to unpassivated reactive metal interfaces

Engineering Contradiction:
Improvemetal layer formationVSAvoidinterface stability
Core Design Contradiction:
Ease of manufactureVSStability of the object's composition

Solution Approach 1:

The patent merges metal deposition and graphene formation into a single in-situ process, ensuring that graphene immediately covers and passivates the reactive metal interfaces. This simultaneous formation eliminates exposed metal surfaces that would otherwise be unstable, while maintaining ease of manufacture through a unified process.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The graphene layer serves a dual function: it is both the desired product and the passivation layer protecting the metal interface. The in-situ growth ensures the graphene self-passivates the metal surfaces it contacts, providing inherent stability without requiring additional protective layers or complex surface treatment steps.

Inventive Principle:
Principle #25Self-service

4Reliability

If in-situ formation method is used, then contamination and damage are reduced, but multiple heating steps are required

Engineering Contradiction:
Improveheterostructure stabilityVSAvoidheating process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses periodic action with two distinct heating steps: first heating the organometallic precursor to deposit the metal layer, then heating the same precursor to form graphene and carbon-encapsulated metal nanostructures. This sequential periodic heating achieves in-situ formation with high reliability while maintaining reasonable process complexity through clear stage separation.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method results in high-quality, stable plasmonic metal/graphene heterostructures with enhanced optical properties and sensitivity, reducing contamination and damage, and maintaining stability over long periods.

Implementation Method 1

heating an organometallic complex precursor comprising a metal at a first temperature T1 for a first period of time t1 to deposit a layer of the metal on a surface of a heated substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

heating, in situ, the precursor at a second temperature T2 for a second period of time t2 to simultaneously form on the layer of the metal, a monolayer of graphene and a plurality of carbon-encapsulated metal nanostructures

Methodology Applied
Scientific EffectPyrolysis: Pyrolysis

Data Source

PatentUS11908960B2Plasmonic metal/graphene heterostructures and related methods
Publication Date: 2024.02.20 UNIVERSITY OF KANSAS
  • US11908960B2 patent drawing
  • US11908960B2 patent drawing
  • US11908960B2 patent drawing

AI summary

A method of making a plasmonic metal/graphene heterostructure comprises heating an organometallic complex precursor comprising a metal at a first temperature T1 for a first period of time t1 to deposit a layer of the metal on a surface of a heated substrate, the heated substrate in fluid communication with the precursor; and heating, in situ, the precursor at a second temperature T2 for a second period of time t2 to simultaneously form on the layer of the metal, a monolayer of graphene and a plurality of carbon-encapsulated metal nanostructures comprising the metal, thereby providing the plasmonic metal/graphene heterostructure. The heated substrate is characterized by a third temperature T3. The plasmonic metal/graphene heterostructures, devices incorporating the heterostructures, and methods of using the heterostructures are also provided.