Plasmonic Via Light Interconnection for High-Speed IC Communication
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Solution Overview
Problem
Semiconductor integrated circuits face limitations in communication speed due to electrical resistance and interference from external electronic waves, making it difficult to increase data transmission efficiency between ICs.
Innovation Solution
A light interconnection device utilizing a plasmonic via structure, comprising metal-insulator-metal waveguides and plasmonic antennas with adjustable slots and nanostructures, to efficiently transmit light and overcome electrical communication constraints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If electrical communication is used to transmit data between semiconductor ICs, then data transmission is achieved through electrical signals, but electrical resistance and interference from external electronic waves limit communication speed
Solution Approach 1:
The patent replaces electrical signal transmission with optical signal transmission. Specifically, electrical signals are converted to optical signals through light-emitting structures (such as LEDs or lasers) that couple light into optical waveguides. This substitution eliminates electrical resistance and electromagnetic interference, enabling higher communication speeds and better signal reliability between semiconductor ICs.
Solution Approach 2:
The patent changes the fundamental parameter of signal transmission from electrical domain to optical domain. By using optical waves instead of electrical currents, the system achieves higher bandwidth and immunity to electrical interference. The waveguide structure parameters (dimensions, materials, refractive indices) are optimized to guide optical signals effectively through the semiconductor package.
2Speed
If optical interconnection is implemented to increase communication speed, then interference from external electronic waves is eliminated, but device structure complexity increases
Solution Approach 1:
The patent merges the electrical interconnection structure with optical interconnection structure. The same conductive traces, vias, and interlayer connections that carry electrical signals are designed to also guide optical signals. This is achieved by selecting materials and geometries that support both electrical conductivity and optical waveguiding, thereby eliminating the need for separate optical components and reducing overall device complexity.
Solution Approach 2:
The patent creates multi-functional structures that serve both electrical and optical purposes. For example, metal layers are designed with thickness and geometry that provide electrical connectivity while also acting as optical waveguides or reflectors. This universal design allows a single structure to perform multiple functions, reducing the number of components needed and simplifying the overall device architecture.
3Productivity
If 3D optical via structure is used to increase integration efficiency, then light transmission in desired direction is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from 2D planar light transmission to 3D vertical light transmission through the use of optical vias. These vias are vertical channels that guide light from one layer to another in the z-direction, enabling three-dimensional integration. The via structures are formed with precise dimensions and alignments to ensure efficient light coupling between layers while maintaining manufacturability through standard semiconductor fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed, interference-free communication by converting electrical signals to optical signals, enhancing data transmission efficiency and integration density in semiconductor ICs.
Implementation Method 1
a first plasmonic antenna that includes a first slot penetrating through the second metal layer
Data Source
AI summary
A light interconnection device includes a metal-insulator-metal (MIM) waveguide including first and second metal layers and a dielectric layer provided between the first and second metal layers, and a plasmonic antenna including a slot penetrating through the second metal layer.


