Plating Apparatus Center Cap for Uniform Electrolyte Flow

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Solution Overview

Problem

Current plating apparatuses in semiconductor manufacturing suffer from low plating rates, leading to inefficient production and non-uniformity in copper pillar shapes due to inadequate mass transfer and current density distribution across the substrate, resulting in abnormal shapes and reduced plating efficiency.

Innovation Solution

A plating apparatus featuring a membrane frame with a center passage and a center cap that supplies catholyte through a plurality of holes, enhancing electrolyte flow and electric field uniformity at the substrate center, allowing for increased flow rates and improved plating rates while maintaining uniformity across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If electrolyte flow rate is increased to improve plating rate, then plating rate is improved, but plated film uniformity deteriorates due to centrifugal distribution of flow

Engineering Contradiction:
Improveplating rateVSAvoidplated film uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention divides the electrolyte flow supply into multiple independent channels: a central supply channel for the substrate center region and multiple peripheral supply channels for the substrate edge regions. This segmentation allows independent control of flow distribution to different areas, enabling high flow rates at the center for high plating rate while maintaining appropriate flow distribution at edges for uniformity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention applies different flow supply characteristics to different regions of the substrate. The center region receives electrolyte through a dedicated central channel with optimized flow characteristics, while edge regions receive electrolyte through separate peripheral channels. This local differentiation ensures each region receives appropriate flow for its specific plating requirements, achieving both high overall plating rate and local uniformity.

Inventive Principle:
Principle #3Local quality

2Productivity

If substrate rotation speed is increased to enhance mass transfer, then mass transfer is improved, but plated film uniformity deteriorates due to centrifugal force causing more plating at edges and less at center

Engineering Contradiction:
Improveplating rateVSAvoidplated film uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention segments the electrolyte supply system into a central supply path and multiple peripheral supply paths, allowing independent optimization of flow characteristics for center and edge regions. This enables compensation for centrifugal effects by providing enhanced flow to the center region through the central channel while controlling edge flow through peripheral channels, maintaining uniformity even during substrate rotation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention provides locally optimized electrolyte flow characteristics to different substrate regions. The central channel delivers electrolyte with flow characteristics specifically suited for the center region, while peripheral channels deliver flow characteristics suited for edge regions. This local quality differentiation counteracts the non-uniform effects of substrate rotation and centrifugal force.

Inventive Principle:
Principle #3Local quality

3Productivity

If current density is increased at substrate center to improve plating rate, then plating rate at center is improved, but plated film uniformity deteriorates due to terminal effect causing higher current density at periphery

Engineering Contradiction:
Improveplating rateVSAvoidplated film uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention applies different electrolyte flow characteristics to different substrate regions to compensate for non-uniform current density distribution. The central channel provides electrolyte flow optimized for the center region where current density is lower due to terminal effect, while peripheral channels provide flow optimized for edge regions where current density is higher. This local differentiation ensures uniform plating across the entire substrate.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention changes the electrolyte flow parameters (flow rate, distribution pattern) as a function of position across the substrate. By adjusting flow parameters through the central and peripheral channels, the system compensates for the spatial variation in current density caused by terminal effect, maintaining uniform plating conditions across different regions.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves a higher plating rate and uniformity of plated films by ensuring consistent electrolyte flow and electric field distribution, addressing the limitations of existing systems and enhancing production efficiency.

Implementation Method 1

The catholyte inlet pipe supplies catholyte to the center cap through the center passage of the membrane frame, and the catholyte is supplied to a center area of the substrate through the first holes of the center cap

Methodology Applied
Scientific EffectFluid flow:

Implementation Method 2

a plating apparatus for depositing metal on a substrate... electroplating has advantages of simple process, low cost, easy to mass production

Methodology Applied
Scientific EffectElectroplating: Electroplating

Data Source

PatentUS11859303B2Plating apparatus
Publication Date: 2024.01.02 ACM RES (SHANGHAI) INC
  • US11859303B2 patent drawing
  • US11859303B2 patent drawing
  • US11859303B2 patent drawing

AI summary

A plating apparatus for depositing metal on a substrate, comprising a membrane frame (14), a catholyte inlet pipe (30) and a center cap (40). The membrane frame (14) has a center passage (144) which passes through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected to the center passage (144) of the membrane frame (14). The center cap (40) is fixed at the center of the membrane frame (14) and covers over the center passage (144) of the membrane frame (14). The top of the center cap (40) has a plurality of first holes (42). The catholyte inlet pipe (30) supplies catholyte to the center cap (40) through the center passage (144) of the membrane frame (14), and the catholyte is supplied to a center area of the substrate through the first holes (42) of the center cap (40).