Plating Resistor with Epitrochoidal Shielding for Film Uniformity
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Solution Overview
Problem
Conventional plating devices face challenges in maintaining uniformity of the plating film thickness across a substrate due to variations in the distance between the resistor and the substrate, leading to thicker films at the peripheral edge and thinner films at the center, which affects the in-plane uniformity.
Innovation Solution
A plating device with a resistor that includes a shielding region and a porous resistance region with an epitrochoidal shape, allowing ion movement while preventing excessive ion attraction to the substrate's edge, and a rotation mechanism to ensure uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the distance between the resistor and the substrate is increased for structural reasons, then the substrate holder and anode can be positioned appropriately, but the ion movement becomes uncontrolled and the plating film thickness uniformity deteriorates
Solution Approach 1:
The resistor is divided into a shielding region (outer frame) and a resistance region (inner porous area), allowing differential control of ion movement. The shielding region blocks ions at the periphery while the resistance region allows controlled ion passage toward the substrate center, maintaining uniformity even at increased distances.
Solution Approach 2:
Different regions of the resistor have different properties: the shielding region provides ion blocking functionality at the periphery, while the resistance region provides ion conduction functionality at the center. This local differentiation allows the resistor to simultaneously address both structural positioning requirements and film uniformity requirements.
2Device complexity
If a conventional resistor with uniform structure is used, then the device structure is simple, but the plating film thickness varies significantly from center to peripheral edge
Solution Approach 1:
The resistor is segmented into functionally distinct shielding and resistance regions, transforming a simple uniform structure into a differentiated structure that can control ion movement patterns to achieve uniform plating film thickness.
Solution Approach 2:
The resistor implements local quality by giving different regions different functions: the peripheral shielding region blocks ions to prevent edge thickening, while the central resistance region allows ion passage to maintain center plating quality, thereby achieving overall in-plane uniformity.
3Productivity
If the resistor allows free ion movement, then the plating process is efficient, but the plating film becomes thicker at the peripheral edge portion
Solution Approach 1:
The resistor applies local quality control by allowing free ion movement through the resistance region (maintaining plating efficiency) while blocking ion movement at the shielding region (preventing peripheral thickening), thus achieving both efficiency and precision.
Solution Approach 2:
The invention converts the harmful effect of uncontrolled ion movement toward the periphery into a beneficial controlled process. The shielding region, which initially might seem to block necessary ion flow, actually prevents harmful edge thickening while the resistance region ensures sufficient ion supply to the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution maintains excellent in-plane uniformity of the plating film regardless of the distance between the resistor and the substrate, reducing film thickness fluctuations and ensuring consistent deposition across the substrate.
Implementation Method 1
a resistance region which is formed on the radially inner side of the shielding region, and has a porous structure allowing the passage of an ion
Implementation Method 2
a resistor which is disposed in a way of facing the substrate holder between the anode and the substrate holder in the plating tank, and is used for adjusting ion movement between the anode and the substrate
Implementation Method 3
an electrolytic plating method is widely used which is relatively inexpensive and has a short treatment time... conductive materials are deposited on a substrate surface
Data Source
AI summary
A plating device includes: an anode; a substrate holder which holds a substrate; a substrate contact which comes into contact with a peripheral edge portion of the substrate; a resistor which is disposed in a way of facing the substrate holder between the anode and the substrate holder, and is used for adjusting ion movement; and a rotation driving mechanism which causes the resistor and the substrate holder to relatively rotate. The resistor includes: a shielding region which forms an outer frame and shields the ion movement between the anode and the substrate; and a resistance region which is formed on the radially inner side of the shielding region, and has a porous structure allowing the passage of an ion. An outer diameter of the resistance region has an amplitude centering on an imaginary reference circle, and has a wave shape which is periodic and annularly continuous.