Alternating Platinum-Alloy Conductive Lines for Magnetic Memory Switching

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Solution Overview

Problem

Existing magnetic memory devices face challenges in achieving high-speed and low-power operation with improved switching characteristics.

Innovation Solution

A magnetic memory device is designed with a conductive line comprising alternately stacked first metal layers of platinum and second metal layers of platinum alloy, such as nickel, to apply spin-orbit torque to a magnetic tunnel junction pattern, enhancing switching characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional conductive line structure is used, then the device structure is simple, but the switching characteristics and critical current density are insufficient

Engineering Contradiction:

Improveswitching characteristicsVSAvoidconductive line structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The conductive line is constructed as a composite structure with alternating platinum layers and platinum alloy layers (containing nickel, cobalt, or manganese). This composite material structure enables high spin Hall conductivity while maintaining structural stability, achieving improved switching characteristics and reduced critical current density compared to conventional single-material conductive lines

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

Different layers within the conductive line have different local compositions and properties: platinum layers provide high conductivity and stability, while platinum alloy layers provide enhanced spin Hall effect. This local differentiation of material properties optimizes the overall switching performance without requiring complete structural redesign

Inventive Principle:

Principle #3Local quality

2Reliability

If high spin hall conductivity is achieved through material composition, then switching characteristics improve, but manufacturing precision requirements increase

Engineering Contradiction:

Improveswitching characteristicsVSAvoidlayer stacking precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The invention optimizes specific parameters including the thickness of each layer (platinum and alloy layers), the composition ratios of alloying elements (nickel, cobalt, or manganese), and the number of alternating layers. By carefully controlling these parameters, the patent achieves high spin Hall conductivity while maintaining compatibility with existing manufacturing capabilities

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device achieves lower critical current density for switching and improved switching characteristics by leveraging high spin hall conductivity and angle, facilitating efficient data read/write operations.

Implementation Method 1

the first conductive line is configured to apply a spin-orbit torque to the magnetic tunnel junction pattern

Methodology Applied

Scientific EffectSpin-orbit torque:

Implementation Method 2

leveraging high spin hall conductivity and angle

Methodology Applied

Scientific EffectSpin hall effect: Hall Effect

Data Source

PatentUS20250301917A1Magnetic memory device and method of manufacturing the same

Publication Date: 2025.09.25 SAMSUNG ELECTRONICS CO LTD

AI summary

A magnetic memory device may include a conductive line on a substrate and a magnetic tunnel junction pattern on the conductive line. The conductive line includes first and second metal layers alternately stacked in a direction perpendicular to an upper surface of the substrate. The first metal layers include platinum, and the second metal layers include platinum and another metal element other than platinum.