Platinum Layer Patterning via Chloride-Fluoride Etching
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Solution Overview
Problem
The formation of fence polymer byproducts during the dry etching of platinum layers in MEMS fabrication is challenging, as they are difficult to remove and cause deformations in the formed structures, necessitating an effective patterning method to avoid these residues.
Innovation Solution
A method involving an etchant comprising a chloride-containing gas and a fluoride-containing gas is used to pattern the platinum layer, with a gas ratio of chloride to fluoride adjusted to be substantially equal to or lower than 1, to minimize fence polymer formation and optimize the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chloride-containing gas is used in the etching process, then the removing rate of the platinum layer is improved, but fence polymer byproducts are formed that are hard to remove
Solution Approach 1:
The patent applies this principle by introducing fluoride-containing gas to convert the harmful fence polymer byproducts into volatile compounds that can be easily removed. The fluoride reacts with the polymer residues formed by chloride etching, transforming the difficult-to-remove harmful byproducts into volatile substances that evaporate during or after the etching process, thus eliminating the harmful effect while maintaining the high removing rate benefit
Solution Approach 2:
The patent uses a composite etchant system combining chloride-containing gas and fluoride-containing gas. This composite approach allows the chloride component to provide high etching speed while the fluoride component simultaneously suppresses polymer formation and removes residues. The synergistic interaction between the two gases creates an etching environment that achieves both high productivity and clean patterning without requiring separate process steps
2Object-generated harmful factors
If fluoride-containing gas is used in the etching process, then volatile byproducts are formed that are easy to remove, but the removing rate of the platinum layer decreases
Solution Approach 1:
The patent merges the functions of chloride-containing gas (high removing rate) and fluoride-containing gas (volatile byproduct formation) into a single etching process. By combining these two gases in the etchant, the patent achieves both the high productivity benefit of chloride etching and the clean patterning benefit of fluoride etching, with the composite etchant system providing synergistic effects that neither gas could achieve alone
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces polymer residues and improves the patterning of platinum layers, enhancing the quality and reliability of MEMS structures by controlling the etching process and preventing unwanted byproduct formation.
Implementation Method 1
an etchant used in the etching process includes at least a chloride-containing gas and at least a fluoride-containing gas
Implementation Method 2
The fluoride-containing gas used in the etching process may cause the formation of volatile byproducts that can be easily removed
Implementation Method 3
an etching process is performed to pattern the platinum layer
Data Source
AI summary
A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.