In Situ Platinum and Nitride Removal via Mixed Acid Etching
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Solution Overview
Problem
The challenge in semiconductor processing is the difficulty in removing platinum atoms from wafers without increasing processing time and costs, as platinum contamination leads to electric leakage in semiconductor devices due to its stability.
Innovation Solution
A method involving the in situ removal of nitride and platinum layers using a chemical solution with a sulfuric acid and phosphoric acid component, optionally including hydrogen peroxide, within a specific temperature and concentration range, allowing for simultaneous removal in one chamber, thereby reducing processing time and costs while enhancing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional separate removal processes are used for nitride layer and platinum, then removal completeness is improved, but processing time and costs increase
Solution Approach 1:
The patent combines the removal of nitride layer and platinum into a single in-situ removal process using a unified chemical solution containing sulfuric acid and phosphoric acid. This merging of two separate removal processes into one step achieves complete removal of both materials simultaneously, maintaining high reliability while significantly reducing processing time and eliminating the need for multiple process chambers.
Solution Approach 2:
The chemical solution is designed to perform multiple functions: it removes both the nitride layer and platinum contamination in a single application. The solution contains sulfuric acid for nitride removal and phosphoric acid for platinum removal, making it a universal remover that handles both materials effectively without requiring separate specialized processes.
2Reliability
If multiple separate removal processes are used, then removal effectiveness is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple removal processes into a single integrated in-situ removal step. Instead of using separate processes for nitride layer removal and platinum removal, the unified chemical solution accomplishes both tasks simultaneously in one chamber, thereby reducing manufacturing complexity while maintaining high removal effectiveness.
Solution Approach 2:
The chemical solution is formulated as a multi-functional agent that can remove both nitride layer and platinum. This universal solution simplifies the manufacturing process by eliminating the need for multiple specialized removal steps, reducing process complexity while ensuring effective removal of all contaminants.
3Reliability
If conventional removal methods are used, then process reliability is maintained, but processing costs increase
Solution Approach 1:
The patent combines multiple removal operations into a single in-situ removal process, reducing the number of process chambers and steps required. This consolidation maintains process reliability through controlled chemical removal while significantly lowering processing costs by reducing equipment usage, process time, and operational complexity.
Solution Approach 2:
The universal chemical solution that removes both nitride layer and platinum in one step reduces manufacturing costs by eliminating the need for multiple specialized processes. This multi-functional approach maintains reliable removal effectiveness while reducing overall processing costs through process simplification and resource efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes platinum and nitride layers in situ, reducing processing time and costs while improving removal efficiency, thus addressing the issue of platinum contamination and preventing electric leakage in semiconductor devices.
Implementation Method 1
the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component
Data Source
AI summary
A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.