Platinum Sputtering Target Grain Structure for Uniform Thin Films

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional platinum-based sputtering targets struggle to maintain in-plane uniformity over time, leading to variations in film thickness and electrical properties, which affects the yield and reliability of semiconductor devices and magnetic recording media.

Innovation Solution

A platinum-based sputtering target with a strictly controlled material structure in the thickness-direction cross section, where the average grain size in the entire determination region is 150 μm or less, and the coefficient of variation is 15% or less, ensuring stable sputtering properties over time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional sputtering targets are used, then initial in-plane uniformity can be achieved, but in-plane uniformity deteriorates over time due to accumulation of usage

Engineering Contradiction:
Improvein-plane uniformity over timeVSAvoidusage time
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The invention changes the microstructural parameters of the target material by strictly controlling the average grain size (150 μm or less) and its distribution uniformity (coefficient of variation 15% or less) in the thickness-direction cross section. This parameter control ensures that the target maintains stable sputtering properties throughout its usage life, preventing the deterioration of in-plane uniformity that occurs with conventional targets.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If crystal grains are refined to ensure in-plane uniformity, then manufacturing complexity increases due to additional processing steps

Engineering Contradiction:
Improvein-plane uniformity of film thicknessVSAvoidproduction process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The invention applies local quality control by specifying that the average grain size and its distribution uniformity be controlled specifically in the thickness-direction cross section of the target. This localized approach to grain size control achieves the necessary in-plane uniformity without requiring complex processing throughout the entire target structure, thereby reducing manufacturing complexity while maintaining precision.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The target achieves stable in-plane uniformity over time, allowing for the consistent formation of platinum thin films with constant film thickness, thereby improving the yield and reliability of semiconductor devices and magnetic recording media.

Implementation Method 1

a strain is introduced by forging and cross rolling, and the heat treatment is subsequently performed for refinement of crystal grains through recrystallization

Methodology Applied
Scientific EffectRecrystallization: Heat Treatment

Implementation Method 2

a sputtering method using a platinum-based sputtering target (hereinafter, sometimes simply referred to as a target) containing platinum or a platinum alloy is applied

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS12325908B2Platinum-based sputtering target, and method for producing the same
Publication Date: 2025.06.10 TANAKA KIKINZOKU KOGYO KK
  • US12325908B2 patent drawing
  • US12325908B2 patent drawing
  • US12325908B2 patent drawing

AI summary

The present invention relates to a platinum-based sputtering target containing platinum or a platinum alloy. The platinum-based sputtering target of the present invention is characterized by a material structure in a thickness-direction cross section thereof. Specifically, when a thickness-direction cross section is equally divided into n sections (n=5 to 20) along a thickness direction, a region including (n−2) sections excluding both end sections is set as a determination region, and when an average grain size in each of the sections is measured in the determination region, as well as an average grain size in the entire determination region is measured, the average grain size in the entire determination region is 150 μm or less, and a coefficient of variation calculated based on the average grain size in each of the sections of the determination region is 15% or less.