Gate Driver Using PMOS Transistors to Reduce Dead Space

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Solution Overview

Problem

Existing gate drivers in display devices face issues with increased dead space due to the use of NMOS transistors, which lead to reduced operational reliability and increased transistor size, necessitating bootstrapping operations to manage voltage levels.

Innovation Solution

The gate driver is designed with PMOS transistors for the carry output and gate output circuits, incorporating a delay circuit, voltage limiting circuit, and inverter circuit to manage gate signal voltages, reducing the need for bootstrapping and minimizing dead space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If NMOS transistors are used in the carry output circuit and gate output circuit, then the threshold voltage shifts in a negative direction, but this decreases operational reliability and increases transistor size

Engineering Contradiction:
Improveoperational reliabilityVSAvoidthreshold voltage shift
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent inverts the transistor type used in the carry output circuit and gate output circuit from NMOS to PMOS. This inversion prevents the negative threshold voltage shift that occurs with NMOS transistors, thereby improving operational reliability and reducing the need for larger transistor sizes to compensate for mobility issues.

Inventive Principle:
Principle #13The other way round (Inversion)

2Productivity

If NMOS transistors are used in the carry output circuit and gate output circuit, then the mobility is reduced, but this increases the size of the transistors and the dead space of the gate driver

Engineering Contradiction:
ImprovemobilityVSAvoiddead space
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The patent switches from NMOS to PMOS transistors in the carry output circuit and gate output circuit. PMOS transistors have higher mobility than NMOS transistors, which reduces the required transistor size and consequently minimizes the dead space in the gate driver circuit.

Inventive Principle:
Principle #13The other way round (Inversion)

3Area of stationary object

If PMOS transistors are used in the carry output circuit and gate output circuit, then the dead space is reduced, but the voltage levels must be carefully managed

Engineering Contradiction:
Improvedead spaceVSAvoidvoltage management complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent introduces a voltage limiting circuit as an intermediary component between the PMOS transistors in the carry output circuit and gate output circuit. This voltage limiting circuit manages the voltage levels by constraining them within safe ranges, thereby reducing the complexity of voltage management while maintaining the benefits of using PMOS transistors.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250209960A1Gate driver and display device including the gate driver, and electronic device including the display device
Publication Date: 2025.06.26 SAMSUNG DISPLAY CO LTD
  • US20250209960A1 patent drawing
  • US20250209960A1 patent drawing
  • US20250209960A1 patent drawing

AI summary

A gate driver includes stages including a delay circuit for receiving an input signal responsive to a clock signal and outputting the input signal to a control node, a voltage limiting circuit for limiting a voltage of the control node based on high and low limit voltages, an inverter circuit for inverting and outputting the voltage of the control node to an inverting control node, a carry output circuit for outputting a first low gate voltage to a carry output node and outputting a first high gate voltage to the carry output node responsive to the voltage of the inverting control node and a gate output circuit for outputting a second low gate voltage that is lower than the first low gate voltage to a gate output node and outputting a second high gate voltage that is higher than the first high gate voltage to the gate output node.