PMOS LDO Regulator Feedback Loop for High-Frequency PSRR

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Solution Overview

Problem

Conventional LDO regulators designed with p-type metal-oxide-semiconductor (PMOS) transistors suffer from limited operational bandwidth and degradation of power supply rejection ratio (PSRR) and reverse PSRR at high frequencies, making them less effective compared to n-type metal-oxide-semiconductor (NMOS) transistors, especially in 5G millimeter-wave frequency synthesizers.

Innovation Solution

A low drop-out (LDO) regulator is implemented using PMOS transistors with a high bandwidth feedback loop, incorporating a first PMOS transistor with its drain coupled to an output node and a second PMOS transistor with its source coupled to the same output node, along with amplifiers to control the gates based on sensed output voltage, enhancing PSRR and RPSRR.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If PMOS transistors are used in LDO regulator, then device complexity is reduced and ease of manufacture is improved, but operational bandwidth is limited and PSRR degradation occurs at high frequencies

Engineering Contradiction:
Improveease of manufactureVSAvoidoperational bandwidth
Core Design Contradiction:
Ease of manufactureVSSpeed

Solution Approach 1:

The LDO regulator is segmented into two separate control paths: a first amplifier controls the gate of the PMOS transistor for basic voltage regulation, while a second amplifier controls the gate of the switch transistor for high-frequency PSRR enhancement. This segmentation allows each amplifier to be optimized for its specific function, resolving the contradiction between ease of manufacture and operational bandwidth.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The switch transistor is dynamically controlled by the second amplifier to enable high-frequency switching that enhances PSRR. The dynamic switching action allows the PMOS-based LDO to achieve high-frequency performance comparable to NMOS implementations, while maintaining the manufacturing advantages of PMOS technology.

Inventive Principle:
Principle #15Dynamics

2Use of energy by moving object

If conventional PMOS LDO regulator is used, then power consumption is reduced, but PSRR and RPSRR degrade at high frequencies

Engineering Contradiction:
Improvepower consumptionVSAvoidPSRR
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

A high-frequency feedback path is introduced through the second amplifier and switch transistor. This feedback mechanism senses output voltage variations at high frequencies and rapidly adjusts the switch transistor to compensate, maintaining PSRR performance without significantly increasing power consumption. The feedback operates only when needed for high-frequency correction.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The invention changes the operating parameters of the PMOS transistor by introducing a controlled switching mechanism. The switch transistor operates in switching mode rather than linear mode, changing its effective resistance characteristics dynamically to maintain low output impedance at high frequencies, thereby improving PSRR while keeping average power consumption low.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If single amplifier control is used in PMOS LDO, then device complexity is minimized, but bandwidth is limited

Engineering Contradiction:
Improvedevice complexityVSAvoidbandwidth
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The control function is segmented into two amplifiers with distinct roles: the first amplifier handles low-frequency regulation with high gain, while the second amplifier handles high-frequency stabilization. This segmentation enables bandwidth extension without requiring a single complex high-bandwidth amplifier, thus balancing device complexity and performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The second amplifier serves multiple functions: it provides high-frequency feedback for PSRR enhancement, controls the switch transistor for bandwidth extension, and stabilizes the output at high frequencies. This multi-functionality achieves high bandwidth performance without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10990117B2P-type metal-oxide-semiconductor (PMOS) low drop-out (LDO) regulator
Publication Date: 2021.04.27 QUALCOMM INC
  • US10990117B2 patent drawing
  • US10990117B2 patent drawing
  • US10990117B2 patent drawing

AI summary

Certain aspects of the present disclosure provide a low drop-out (LDO) regulator. The LDO regulator generally includes a first p-type metal-oxide-semiconductor transistor (PMOS) having a drain coupled to an output node of the LDO regulator, a first amplifier having an input coupled to a reference voltage node and an output coupled to a gate of the first PMOS transistor, a second PMOS transistor having a source coupled to the output node, and a second amplifier having an input coupled to the output node and an output coupled to a gate of the second PMOS transistor.