PN Junction Semiconductor Structure for Higher Current Density
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Solution Overview
Problem
Small-sized diodes with abrupt PN junctions have low reverse breakdown voltage and high reverse current, limiting their electric current density under the same voltage.
Innovation Solution
A semiconductor device with a substrate, semiconductor structure, insulating layer, and conductive layer is designed, where the conductive layer overlaps the PN junction to reduce the potential barrier by adjusting the Fermi energy levels, thereby increasing the electric current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a PN junction is designed as an abrupt junction to increase electric current density, then the electric current density increases, but the reverse breakdown voltage decreases and reverse current increases
Solution Approach 1:
The patent applies local quality by creating a graded junction structure where the doping concentration changes gradually rather than abruptly. Specifically, the first doped region has a first doping concentration and the second doped region has a second doping concentration, forming a gradient that locally optimizes both current density and reverse breakdown characteristics. This gradual transition allows high current density in the doped regions while maintaining better reverse breakdown voltage compared to an abrupt junction.
2Quantity of substance
If a PN junction is designed as an abrupt junction to increase electric current density, then the electric current density increases, but the reverse current increases
Solution Approach 1:
The graded junction structure with varying doping concentrations creates local quality variations that suppress reverse current. The gradual doping gradient reduces the generation-recombination current in the depletion region compared to an abrupt junction, while still maintaining high forward current density through the doped regions.
3Length of moving object
If the diode size is decreased to reduce device dimensions, then the device size decreases, but the total electric current decreases
Solution Approach 1:
The patent changes the doping concentration parameter to achieve higher current density in smaller devices. By optimizing the doping concentrations in the first and second doped regions, the device maintains high total electric current despite reduced dimensions, as the increased current density compensates for the smaller active area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves increased electric current density under the same voltage by reducing the potential barrier across the PN junction, enhancing the performance of small-sized diodes.
Implementation Method 1
The conductive layer is configured to reduce a potential barrier of the PN junction formed by the first semiconductor structure and the second semiconductor structure
Data Source
AI summary
Embodiment relates to the field of semiconductor technologies, and proposes a semiconductor device and a fabrication method thereof. The semiconductor device includes: a substrate, a semiconductor structure, an insulating layer, and a conductive layer. The semiconductor structure is positioned on a side of the substrate and includes a first semiconductor structure and a second semiconductor structure, wherein the first semiconductor structure and the second semiconductor structure form a PN junction. The insulating layer is positioned on a side of the semiconductor structure facing away from the substrate. The conductive layer is positioned on a side of the insulating layer facing away from the substrate, and an orthographic projection of the conductive layer on the substrate at least partially overlaps an orthographic projection of the PN junction on the substrate.