p-n Junction Switch Layout for Passive Charge Carrier Storage

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Solution Overview

Problem

Existing monitoring devices face challenges in withstanding extreme environmental changes, such as high temperatures, and accurately recording and storing data without manual errors or power dependency, especially in environments where conventional sensors become unpredictable.

Innovation Solution

A switch device with a p-n junction and conduction layer geometry that generates an electric field opposing charge carrier migration, allowing data storage without power and enabling robust, passive recording of environmental conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If charge carriers are allowed to migrate freely in the conduction layer, then the device can operate, but data cannot be stored without power and measurements are not persistent

Engineering Contradiction:
Improvedata storage without powerVSAvoidconduction layer geometry and offset region
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The p-doped and n-doped layers are positioned asymmetrically with a vertical offset, creating an uneven electric field distribution that selectively opposes charge carrier migration in one direction. This asymmetric geometry enables data storage functionality while maintaining device operation.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The invention introduces a vertical offset dimension between the p-doped and n-doped layers, moving from a planar to a three-dimensional configuration. This dimensional change creates the offset region that generates the opposing electric field, enabling persistent data storage without requiring additional power.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the p-doped and n-doped layers are aligned in the same plane, then the device structure is simple, but no opposing electric field is generated to confine charge carriers

Engineering Contradiction:
Improveopposing electric field generationVSAvoidvertical offset configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The p-doped and n-doped layers are positioned asymmetrically with a vertical offset, creating an uneven electric field distribution that selectively opposes charge carrier migration in one direction. This asymmetric geometry enables data storage functionality while maintaining device operation.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device provides reliable, tamper-resistant, and accurate data storage of environmental exposure history, independent of power sources, by confining charge carriers until a threshold voltage is reached, facilitating precise detection and storage of environmental conditions.

Implementation Method 1

an electric field generated by the p-n junction opposes the migration of the charge carriers from the first region to the second region

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentEP4641156A1A switch device, a method of manufacturing a switch device and a method of taking a measurement
Publication Date: 2025.10.29 ANALOG DEVICES INT UNLTD CO
  • EP4641156A1 patent drawingFigure 1
  • EP4641156A1 patent drawingFigure 2
  • EP4641156A1 patent drawingFigure 3A~3C

AI summary

There is provided a switch device, comprising a substrate; a p-n junction comprising a first p-doped layer provided on the substrate and a first n-doped layer provided on the substrate and opposing the first p-doped layer; a conduction layer provided on the substrate and extending from a first region adjacent the p-doped layer to a second region adjacent the n-doped layer, wherein the conduction layer comprises a plurality of charge carriers moveable within the conduction layer and wherein, in an initial state, the concentration of charge carriers in the first region is higher than in the second region; and wherein the first p-doped layer is vertically offset relative to the first n-doped layer to provide an offset region adjacent the first p-doped layer in which a plane parallel to the surface of the substrate extends through the offset region and the first n-doped layer; and wherein a part of the conduction layer defining at least a part of the first region is provided in the offset region such that an electric field generated by the p-n junction opposes the migration of the charge carriers from the first region to the second region.