Optoelectronic p/n Junction Switching via Dopant Photoionization
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Solution Overview
Problem
Existing optoelectronic devices, such as transistors and single-photon generators, have high energy consumption due to the need for continuous voltage application to maintain their states, leading to inefficiency, especially when maintaining a state for a long period.
Innovation Solution
An optoelectronic device is designed with a p/n junction formed by semiconductor materials of different doping types, where an emitter generates electromagnetic radiation with photon energy greater than or equal to the ionization energy of the second portion, allowing the depletion zone's dimension to be controlled by voltage and radiation, reducing energy consumption by switching states non-volatilely.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If continuous voltage is applied to maintain device state, then device state stability is improved, but energy consumption increases
Solution Approach 1:
The patent replaces the electrical control mechanism (continuous voltage application) with an optical mechanism (emitter generating radiation). The emitter illuminates the semiconductor portion, inducing ionization of dopants that creates a depletion zone, thereby substituting electrical field control with optical field control to achieve non-volatile state maintenance.
Solution Approach 2:
The patent utilizes the phase transition of dopant ionization states. When the emitter illuminates the semiconductor portion with sufficient energy, dopants transition from neutral to ionized state, creating charge carriers that form a depletion zone. This phase transition allows the device to maintain its state without continuous energy input, as the ionized dopants remain ionized until the state is intentionally changed.
2Speed
If voltage is applied to control depletion zone extension, then device switching speed is improved, but energy consumption increases
Solution Approach 1:
The patent replaces electrical field control with optical field control. The emitter generates radiation that directly ionizes dopants in the semiconductor portion, creating or removing the depletion zone without requiring continuous voltage application. This optical control mechanism achieves fast switching while eliminating the energy consumption associated with maintaining voltage during state holding.
3Ease of operation
If thermal energy is used for conductivity, then device operation is simplified, but energy efficiency decreases
Solution Approach 1:
The patent replaces thermal energy-based conductivity control with radiation-based ionization control. The emitter provides optical energy that directly ionizes dopants, creating charge carriers and controlling conductivity through the depletion zone formation rather than through thermal excitation. This approach improves energy efficiency by using targeted optical energy instead of bulk thermal energy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves reduced energy consumption by modifying the depletion zone's dimension only when illuminated, allowing for non-volatile switching and minimizing power usage, especially in maintaining states over extended periods without continuous voltage application.
Implementation Method 1
an emitter configured to generate an electromagnetic radiation having a photon energy greater than or equal to the ionization energy of the dopants of the second portion
Implementation Method 2
photon energy greater than or equal to the ionization energy of the dopants... to illuminate the second portion with the radiation
Implementation Method 3
the first portion and the second portion being in contact with one another and forming a p/n junction including a depletion zone in the first portion
Implementation Method 4
the voltage between the two contacts modifying the extension of a depletion zone of the junction
Data Source
AI summary
A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V1) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.