PN Junction Singulation with a Transverse Conduction Avoidance Region
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Solution Overview
Problem
The production of semiconductor components, particularly photovoltaic solar cells, faces challenges in singulation due to increased recombination rates at separating surfaces, leading to reduced electronic quality and efficiency, with existing methods being time-consuming or requiring additional costly steps.
Innovation Solution
A method involving the formation of a transverse conduction avoidance region with reduced conductivity by at least a factor of 10, where the separating surface borders or passes through this region, curtails the flow of charge carriers to the separating surface, thereby minimizing recombination and maintaining electronic quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If singulation is performed by separating the substrate at separating surfaces, then the semiconductor components are separated and productivity is improved, but the recombination rate at the separating surfaces increases and electronic quality deteriorates
Solution Approach 1:
The patent applies local quality by creating a transverse conduction avoidance region with specific properties (reduced conductivity by at least factor of 10) only in the localized area where the separating surface is formed. This allows the majority of the semiconductor component to maintain its original high electronic quality while the specific region affected by singulation is modified to prevent charge carrier flow to the separating surface, thus resolving the contradiction between productivity improvement through singulation and maintenance of electronic quality.
2Reliability
If existing methods are used to reduce recombination at separating surfaces, then electronic quality is improved, but the production process becomes more time-consuming and costly
Solution Approach 1:
The patent implements preliminary action by forming the transverse conduction avoidance region before the actual singulation process. This preparatory modification of the semiconductor component's conductivity distribution ensures that when separation occurs, charge carriers are already prevented from flowing to the separating surface. This approach allows electronic quality to be maintained without requiring additional post-singulation processing steps, thus avoiding time losses and additional costs.
3Reliability
If the transverse conduction layer is modified to reduce conductivity, then charge carrier flow to separating surface is curtailed and electronic quality is maintained, but additional processing steps are required
Solution Approach 1:
The patent applies parameter changes by modifying the electrical conductivity parameter of the transverse conduction layer in the region where the separating surface will be formed. By reducing the conductivity by at least a factor of 10 in this specific region, the patent changes the electrical parameters to prevent charge carrier flow to the separating surface. This parameter modification can be integrated into existing manufacturing processes, maintaining electronic quality without significantly increasing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the negative influence of the separating surface on the semiconductor component's electronic quality, allowing for cost-effective and efficient singulation without substantial reduction in electronic quality, suitable for industrial production.
Implementation Method 1
a transverse conduction avoidance region is formed and arranged at the break side in such a way that the transverse conductivity is reduced by at least a factor of 10
Data Source
AI summary
A semiconductor component having at least one emitter, at least one base, and a pn junction formed between emitter and base, having at least one non-metallic transverse conduction layer for the transverse conduction of majority charge carriers of the emitter. The emitter includes the transverse conduction layer and/or the transverse conduction layer is formed parallel to the emitter and in a manner electrically conductively connected thereto, and having a break side, at which the semiconductor component was singulated. A transverse conduction avoidance region is formed and arranged at the break side such that the transverse conductivity is reduced by at least a factor of 10, wherein the transverse conduction avoidance region has a depth (TQ) in the range of 5 μm to 500 μm, in particular 10 μm to 200 μm, perpendicular to the break side. A method for singulating a semiconductor component is also provided.