PN Junction Optoelectronic Structure With Conductive Trench Spacer
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Solution Overview
Problem
Existing PN junction optoelectronic devices, such as LEDs, face challenges in improving conversion efficiency due to superficial damage during etching processes, which degrades conductivity and reduces the effectiveness of the hole channel induced by the conductive grid, and the use of insulating spacers can complicate the formation of conduction channels.
Innovation Solution
A PN junction optoelectronic device with a vertical stack of semiconductor layers and a conductive spacer made of materials like platinum, nickel, or tungsten, featuring an insulated conductive grid with a gate insulator and conductive gate layer, and a conductive spacer that extends over the trench sides, facilitating improved charge carrier injection and reducing surface damage through chemical cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conductive grid is applied to improve charge carrier injection, then conversion efficiency is improved, but superficial damage during etching degrades conductivity
Solution Approach 1:
The patent applies preliminary protective action by forming the conductive grid structure before the etching process, and using spacer elements to protect the grid during subsequent manufacturing steps. This preliminary protection prevents superficial damage that would otherwise degrade conductivity and reduce conversion efficiency.
Solution Approach 2:
The patent introduces spacer elements as intermediary protective structures between the conductive grid and the etching process. These spacers act as a mediator that protects the grid's conductivity integrity during manufacturing while allowing the grid to function properly for improving charge carrier injection and conversion efficiency.
2Reliability
If insulating spacers are used to protect the grid, then grid protection is improved, but formation of conduction channels becomes more complex
Solution Approach 1:
The patent applies local quality by making the spacer elements conductive rather than insulating, and by positioning them specifically at critical locations where protection is needed. This localized conductive spacer approach maintains grid protection while preserving charge carrier injection pathways, avoiding the complexity issue of insulating spacers blocking conduction channels.
Solution Approach 2:
The patent inverts the conventional approach by using conductive spacers instead of insulating spacers. This inversion allows the spacers to both protect the grid structure and maintain electrical conductivity for charge carrier injection, thereby simplifying rather than complicating conduction channel formation.
3Shape
If etching is performed to create the trench, then device structure is improved, but superficial damage occurs reducing effectiveness
Solution Approach 1:
The patent introduces protective spacer elements as intermediary structures during the etching process. These spacers act as a mediator that allows the etching to create the desired trench shape while protecting the surrounding surfaces from superficial damage, thereby maintaining surface integrity alongside structural improvement.
Solution Approach 2:
The patent applies beforehand cushioning by forming protective spacer structures prior to the etching process. This prior protection cushions the device surfaces against the damaging effects of etching, allowing the trench to be formed with the desired shape while minimizing superficial damage to surrounding areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light conversion efficiency by maintaining the integrity of the anode contact metallization and facilitating hole injection into the emissive layer, while the conductive spacer aids in forming efficient conduction channels, thus improving the overall performance of the optoelectronic device.
Implementation Method 1
Applying a potential to the conductive gate creates an electric field that improves the injection of charge carriers into the junction, and consequently the conversion efficiency of the device.
Data Source
Figure 1~2
Figure 3
AI summary
The invention relates to an optoelectronic device (300) comprising: - a vertical stack of first (101) and second (105) semiconductor layers forming a PN junction, and a third conductive layer (107) arranged on and in contact with the face of the second layer opposite the first layer; - a peripheral trench (110) passing through the third (107) and second (105) layers, said trench laterally delimiting a portion of the third layer (107) and a portion of the second layer (105); - in said trench (110), a conductive spacer (301) in contact with a side edge of said portion of the third layer (107); and - in said trench (110), an insulated conductive gate (113, 11) extending against a side edge of the conductive spacer (301) and against a side edge of said portion of the second layer.