Point-Source LED Structure With Hydrogen Implantation Light Confinement
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Solution Overview
Problem
The production process of point source light-emitting diodes is complicated due to the formation of metal reflection and light reflection reduction surfaces below the light emitting layer, and there is a demand to reduce light emission from areas other than the light emission window.
Innovation Solution
A point source light-emitting diode structure is developed with a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer, featuring a p-type electrode with a light emission window, where the hydrogen ion implanted region has a higher concentration than the non-implanted region, and a method involving sequential formation of n-type and p-type cladding layers, current confinement layers, and hydrogen ion implantation to control light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal reflection surface and light reflection reduction surface are formed below the light emitting layer, then light extraction efficiency is improved, but production process complexity increases
Solution Approach 1:
The patent extracts the light reflection control function from the substrate region below the light emitting layer and relocates it to the p-type contact layer region. By forming the hydrogen ion implanted area in the p-type contact layer instead of creating separate metal reflection surfaces and light reflection reduction surfaces below the active layer, the invention simplifies the production process while maintaining light extraction efficiency through the light emission window.
2Ease of manufacture
If conventional structures are used without hydrogen ion implantation, then production process is simpler, but light emission from areas other than the light emission window increases
Solution Approach 1:
The patent changes the physical-chemical parameters of the p-type contact layer by implanting hydrogen ions into it. This parameter change (introducing hydrogen ions) modifies the optical properties of the contact layer, creating a hydrogen ion implanted area that suppresses light emission from areas other than the light emission window. The hydrogen ion implantation dose and energy are controlled to achieve the desired light emission suppression while maintaining electrical contact functionality.
3Object-generated harmful factors
If hydrogen ion implanted area is formed extending from p-type contact layer to light emitting layer, then light emission from non-window areas is reduced, but manufacturing complexity increases
Solution Approach 1:
The hydrogen ion implanted area in the p-type contact layer serves multiple functions simultaneously: it suppresses light emission from areas other than the light emission window, maintains electrical contact functionality, and provides current confinement. By making the p-type contact layer multi-functional through hydrogen ion implantation, the invention avoids the need for separate dedicated structures for each function, thereby reducing overall structural complexity despite the added implantation step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the production process and effectively reduces light emission from areas outside the light emission window, enhancing the light emission pattern by controlling current flow and confinement.
Implementation Method 1
providing a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer
Implementation Method 2
the hydrogen ion implanted region has a higher concentration than the non-implanted region
Data Source
AI summary
The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.