Polarization Gate Layer for Fin Threshold Voltage Tuning
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Solution Overview
Problem
In semiconductor manufacturing, the small distance between adjacent fin structures makes it difficult to adjust threshold voltages effectively, leading to performance issues due to the challenge of filling multiple stacked work function layers and resulting in similar threshold voltages across different gates.
Innovation Solution
A semiconductor structure and method involving a first polarization layer with semiconductor compound material containing specific atoms, which forms a salt compound with the semiconductor material to achieve a higher threshold voltage, allowing for increased adjustment range of threshold voltages and reducing the likelihood of similar threshold voltages across different gates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple stacked work function layers are formed to adjust threshold voltages, then the threshold voltage adjustment capability should be improved, but the small distance between adjacent fin structures makes it difficult to fill the layers effectively, resulting in similar threshold voltages across different gates
Solution Approach 1:
The patent changes the material parameter of the gate dielectric layer from conventional materials to a polarization layer with specific polarization atoms (La, Ce, Nb, Mg, Sc, Al). This material parameter change enables threshold voltage adjustment through polarization effects rather than relying on multiple stacked work function layers, solving the filling difficulty caused by small fin distances while maintaining effective threshold voltage control
Solution Approach 2:
The patent uses composite material structure consisting of gate dielectric layer, polarization layer, and gate electrode layer. The polarization layer contains semiconductor compound material with specific polarization atoms embedded in the gate dielectric, creating a composite structure that achieves both effective filling in small geometries and precise threshold voltage adjustment through the combined effects of the composite materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively enhances the performance of semiconductor structures by increasing the adjustment range of threshold voltages and reducing the occurrence of similar threshold voltages across different gates, thereby improving the overall performance of the semiconductor structure.
Implementation Method 1
the material of the first polarization layer includes a semiconductor compound material containing first polarization atoms... which forms a salt compound with the semiconductor material
Data Source
AI summary
Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a substrate including a first region; a first polarization layer on the first region; and a first gate structure on the first polarization layer. A material of the first polarization layer includes a semiconductor compound material containing first polarization atoms.