Polarized Light Surface Inspection for Nanoscale Semiconductor Defects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current surface inspection methods for semiconductor elements face challenges in accurately analyzing nanoscale patterns due to low resolutions, and existing methods like electron microscopy are slow and difficult to implement, especially when inspecting entire surfaces and selecting various measurement regions.
Innovation Solution
A surface inspecting method using polarized light beams, where an incident light beam of a first polarized state is irradiated on a target object, and the second polarized state of the reflected light beam is measured, allowing for the calculation of physical quantities of imaginary thin films and patterns, with adjustments made to theoretical models to match measured results, and defects detected by comparing theoretical and measurement spectra.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If optical methods are used to inspect semiconductor element patterns, then the inspection process is simple and non-destructive, but the resolution is insufficient for nanoscale patterns
Solution Approach 1:
The patent changes the optical parameters by using polarized light instead of conventional light, and by controlling the angle of incidence and wavelength of light. This enables optical inspection to achieve nanoscale resolution while maintaining the simplicity and non-destructive nature of optical methods
Solution Approach 2:
The patent replaces the mechanical cutting and vacuum-based electron microscopy system with an optical system using polarized light. This substitution maintains measurement precision for nanoscale patterns while improving ease of operation and eliminating the need for destructive sample preparation
2Measurement precision
If electron microscopy is used to analyze specific shapes, then measurement precision is improved, but the inspection rate decreases due to vacuum state requirements and cross-section cutting
Solution Approach 1:
The patent replaces the complex mechanical and vacuum-based electron microscopy system with a simplified optical system using polarized light. This achieves comparable shape analysis accuracy while dramatically improving inspection rate by eliminating vacuum requirements and destructive sample preparation
Solution Approach 2:
The patent introduces polarized light as an intermediary to interact with the semiconductor patterns. This intermediary enables high-precision shape analysis without requiring vacuum conditions or physical contact, thereby maintaining measurement precision while improving inspection throughput
3Productivity
If conventional optical inspection is used, then the inspection process is fast, but the ability to detect nanoscale defects is insufficient
Solution Approach 1:
The patent changes key optical parameters including using polarized light, controlling wavelength ranges, and optimizing angle of incidence. These parameter changes enable the fast optical inspection process to detect nanoscale defects that would be invisible with conventional optical methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient inspection of entire surfaces with improved resolution and defect detection, reducing inspection time and increasing accuracy by using polarized light to analyze patterns and surfaces without destroying the semiconductor elements.
Implementation Method 1
measuring a second polarized state of a reflected light beam reflected from the target object
Implementation Method 2
irradiating an incident light beam of a first polarized state on a target object... measuring a second polarized state of a reflected light beam
Data Source
AI summary
A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.