Polishing Agent Selective Removal Organic Silicon Oxide
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Solution Overview
Problem
In semiconductor manufacturing, it is challenging to develop a polishing agent that can selectively remove organic silicon oxide while suppressing the polishing of silicon dioxide, due to their similar chemical compositions and hydrophobic properties.
Innovation Solution
A polishing agent containing silica abrasive grains with a positive charge and a tertiary or quaternary allylamine-based polymer, with a pH of 2.8 to 5.0, is used to selectively remove organic silicon oxide while inhibiting the polishing of silicon dioxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a polishing agent is designed to polish organic silicon oxide, then the polishing rate for organic silicon oxide is improved, but the polishing rate for silicon dioxide cannot be suppressed due to similar chemical compositions
Solution Approach 1:
The patent changes the chemical parameters of the polishing agent by introducing a tertiary or quaternary allylamine-based polymer and controlling the pH to 2.8-5.0. This creates a specific chemical environment where the positively charged abrasive grains selectively interact with organic silicon oxide while the polymer suppresses interaction with silicon dioxide, resolving the selectivity issue
Solution Approach 2:
The patent uses a composite polishing agent system combining silica abrasive grains with positive charge, tertiary or quaternary allylamine-based polymer, and pH control. This composite approach allows the abrasive grains to polish organic silicon oxide while the polymer component selectively suppresses polishing of silicon dioxide, achieving both high polishing rate and selectivity
2Manufacturing precision
If polishing agent composition is optimized for selective polishing, then manufacturing precision is improved, but device complexity increases due to multiple components
Solution Approach 1:
The patent optimizes specific parameters including pH (2.8-5.0), abrasive grain charge (positive), and polymer type (tertiary or quaternary allylamine-based). By controlling these parameters within specific ranges, the patent achieves selective polishing precision while managing composition complexity through focused parameter optimization rather than arbitrary component addition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a favorable polishing rate for organic silicon oxide while significantly reducing the polishing rate for silicon dioxide, allowing for selective removal and improved process control in semiconductor manufacturing.
Implementation Method 1
abrasive grains containing silica and having a positive charge in the polishing agent
Implementation Method 2
suppressing polishing of the organic silicon oxide while polishing the silicon oxide by using hydrophobicity of carbon
Data Source
AI summary
An aspect of the present invention provides a polishing agent for polishing a base substrate having an organic silicon oxide and an insulating material containing silicon (excluding the organic silicon oxide) to remove at least a part of the organic silicon oxide, the polishing agent containing abrasive grains containing silica and an allylamine-based polymer, in which the abrasive grains have a positive charge in the polishing agent, the allylamine-based polymer is at least one selected from the group consisting of a tertiary allylamine-based polymer and a quaternary allylamine-based polymer, and a pH of the polishing agent is 2.8 to 5.0.