Polishing Composition with Charge Control Agent for Semiconductor Substrates
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Solution Overview
Problem
The existing chemical mechanical polishing (CMP) techniques for semiconductor substrates are inefficient in polishing speed when using silica, silicon nitride, or polysilicon materials, and the subsequent cleaning processes fail to adequately remove residues, leading to surface contamination and performance degradation.
Innovation Solution
A polishing composition and surface treatment composition incorporating a charge control agent with a critical packing parameter of 0.6 or more and a dispersing medium, which adjusts the zeta potential of the substrate surface, allowing for improved polishing speed and effective residue removal by forming a regular lamellar structure coating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP techniques are used for polishing silicon nitride, silicon oxide, or polysilicon, then the polishing process can be performed, but the polishing speed is insufficient
Solution Approach 1:
The invention changes the chemical parameters of the polishing composition by introducing a charge control agent with a critical packing parameter of 0.6 or more and controlling the pH to be less than 7. This adjusts the zeta potential of the substrate surface, fundamentally altering the interaction between the substrate and abrasive grains to achieve both high polishing speed and excellent surface quality for silicon nitride, silicon oxide, and polysilicon materials.
Solution Approach 2:
The invention uses a composite polishing composition containing multiple components including a charge control agent (such as polyoxyethylene alkyl phenyl ether ammonium sulfate or polyoxyethylene aryl phenyl ether ammonium sulfate), abrasive grains, and other additives. This composite formulation synergistically improves polishing speed while maintaining surface quality through the combined effects of charge control, mechanical abrasion, and chemical interaction.
2Reliability
If conventional cleaning processes are used after polishing, then the cleaning step can be performed, but residues cannot be sufficiently removed
Solution Approach 1:
The invention adjusts the zeta potential parameter of the substrate surface through the charge control agent, which fundamentally changes the electrostatic interaction between the substrate and residues. By controlling the pH to be less than 7 and using a charge control agent with a critical packing parameter of 0.6 or more, the surface charge is optimized to prevent residue adhesion and facilitate easy removal, achieving both high cleanliness and efficient residue removal.
3Device complexity
If polishing is performed without adjusting zeta potential, then the process is simple, but the electrical properties of the semiconductor are adversely affected
Solution Approach 1:
The invention introduces a straightforward parameter control method by adjusting the pH to be less than 7 and selecting a charge control agent with a specific critical packing parameter (0.6 or more). This simple yet effective approach controls the zeta potential to prevent contamination that would adversely affect electrical properties, maintaining both process simplicity and device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances polishing speed and reduces surface residues on semiconductor substrates, improving the electrical properties and reliability of the devices by effectively adjusting the zeta potential and repulsive forces between the substrate and abrasive grains.
Implementation Method 1
forming a regular lamellar structure coating
Implementation Method 2
adjusts the zeta potential of the substrate surface, allowing for improved polishing speed and effective residue removal by forming a regular lamellar structure coating
Implementation Method 3
a dispersing medium, which adjusts the zeta potential of the substrate surface
Implementation Method 4
a polishing pad surface is soaked with a polishing agent, a surface on which a wiring layer of a substrate is formed is pressed thereto, the polishing table is turned while a predetermined pressure (polishing pressure) is applied from a rear surface thereof, and the wiring layer is removed by mechanical friction between the polishing agent and the wiring layer
Implementation Method 5
the wiring layer is removed by mechanical friction between the polishing agent and the wiring layer
Implementation Method 6
it is desirable to introduce a surface treatment step such as a cleaning step after the polishing step to remove the impurities from the surface of the object to be polished after polishing
Data Source
AI summary
An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.