Polishing Composition Selective Defect Removal

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Solution Overview

Problem

Conventional polishing compositions are unable to selectively remove surface defects of specific sizes from semiconductor substrates, leading to incomplete defect removal during polishing processes.

Innovation Solution

A polishing composition comprising hydroxyethyl cellulose with a molecular weight of 500,000 to 1,500,000, abrasive grains, and ammonia, where the hydroxyethyl cellulose is adsorbed to the abrasive grains in a proportion of 30% to 90%, enhancing selective defect removal and wettability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional polishing composition is used, then general polishing function is provided, but selective removal of surface defects of specific sizes is impossible

Engineering Contradiction:
Improveselective defect removal capabilityVSAvoiddefect size selectivity
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent applies parameter changes by specifying a precise molecular weight range for hydroxyethyl cellulose (500,000 to 1,500,000) and controlling the adsorption proportion to abrasive grains (30% to 90%). These parameter optimizations enable the polishing composition to selectively remove surface defects of specific sizes while maintaining effective polishing function.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively reduces surface defects of specific sizes on semiconductor substrates, improving polishing efficiency and surface flatness by forming clusters with the abrasive grains and regulating wettability, while ammonia further enhances defect reduction and pH control.

Implementation Method 1

the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

a water-soluble polymer, which is a component enhancing the wettability to semiconductor substrates

Methodology Applied
Scientific EffectWetting: Wetting

Implementation Method 3

the polishing composition may further include ammonia... the ammonia may be contained in an amount of 0.1% by mass or more and 1.0% by mass or less

Methodology Applied
Scientific EffectpH control:

Data Source

PatentUS10344184B2Polishing composition
Publication Date: 2019.07.09 NITTA HAAS INC
  • US10344184B2 patent drawing

AI summary

Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.