Polishing Composition Erosion Control via Ultrafine Abrasive
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the manufacturing of LSI semiconductor devices, the challenge is to improve level difference performance, particularly by suppressing erosion during the chemical mechanical polishing process, as design rules become stricter and the technique required for device manufacture becomes more demanding.
Innovation Solution
A polishing composition is developed that includes abrasive grains with an average primary particle size of 40 nm or less and a controlled number of coarse particles per cubic centimeter, specifically 20,000 or less, along with a dispersing medium, which effectively improves level difference performance by optimizing the polishing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing compositions are used, then polishing speed is maintained, but erosion increases and level difference performance deteriorates
Solution Approach 1:
The patent changes the particle size parameter of abrasive grains to 40 nm or less (ultrafine range) and controls the coarse particle content to 20,000 or less per 1 cm³. This parameter change transforms the polishing mechanism to reduce erosion while maintaining polishing speed, directly resolving the contradiction between manufacturing precision and harmful factors.
Solution Approach 2:
The patent uses a composite abrasive grain system combining ultrafine particles (40 nm or less) with controlled coarse particle content, creating a multi-scale abrasive composition that achieves both high precision polishing and erosion suppression through synergistic effects of different particle sizes.
2Manufacturing precision
If erosion is suppressed to improve level difference performance, then manufacturing precision improves, but polishing speed may decrease
Solution Approach 1:
By setting the abrasive grain particle size to 40 nm or less and controlling coarse particle content to 20,000 or less per 1 cm³, the patent achieves a parameter optimization that simultaneously maintains high polishing speed and suppresses erosion, resolving the contradiction between manufacturing precision and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polishing composition significantly enhances the level difference performance by reducing erosion and improving the polishing speed of silicon nitride films, achieving high flatness and precise control of the semiconductor substrate.
Implementation Method 1
chemical mechanical polishing (CMP)
Implementation Method 2
a dispersing medium
Data Source
AI summary
Polishing compositions are disclosed which contribute to improvement of level difference performance (in particular, erosion). The polishing composition used for polishing an object to be polished includes abrasive grains and a dispersing medium, wherein the abrasive grains have an average primary particle size of 40 nm or less, and the number of coarse particles having a particle size of 0.2 to 1,600 μm in the abrasive grains is 20,000 or less per 1 cm3 of the polishing composition.