Polishing Composition for High Group 13 Substrates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Polishing substrates with layers containing 40 mass % or more of elements from group 13 of the periodic table poses challenges in achieving high polishing speed while minimizing surface defects.
Innovation Solution
A polishing composition comprising cationically modified silica, trialkylamine oxide, and an oxidizing agent, with the trialkylamine oxide content between 3 mass ppm and 40 mass ppm, and a pH less than 5, is used to polish substrates with high group 13 element content, enhancing polishing speed and reducing surface defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions are used on substrates with high group 13 element content, then polishing can be performed, but the polishing speed is low and surface defects increase
Solution Approach 1:
The patent changes the chemical parameters of the polishing composition by specifying a pH range of 2.0 or less and particular concentrations of oxidizing agents (1-10 mass%) and group 13 element compounds (0.1-5 mass%). These parameter changes enable effective polishing of high group 13 element content substrates while maintaining surface quality and achieving high polishing speeds
Solution Approach 2:
The polishing composition uses a composite formulation combining multiple components: abrasive grains (silica, alumina, or ceria), oxidizing agents (hydrogen peroxide, potassium permanganate, or sodium chlorite), group 13 element compounds (boron, aluminum, gallium, or indium compounds), and various additives. This composite approach synergistically addresses both polishing speed and surface defect reduction
2Productivity
If polishing composition with high abrasive content is used to increase polishing speed, then productivity improves, but surface defects increase
Solution Approach 1:
The patent optimizes the concentration parameters of all components in the polishing composition. Specifically, it controls abrasive grain concentration, oxidizing agent concentration (1-10 mass%), and group 13 element compound concentration (0.1-5 mass%) to achieve optimal balance between material removal rate and surface quality, preventing excessive abrasion that causes defects
Solution Approach 2:
The patent introduces group 13 element compounds and oxidizing agents as intermediary substances that mediate between the abrasive grains and the substrate. These intermediaries chemically interact with the high group 13 element content material, facilitating controlled removal while protecting the substrate from direct mechanical damage that would cause surface defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables high-speed polishing of substrates with high group 13 element content while significantly reducing surface defects, improving the efficiency and quality of the polishing process.
Implementation Method 1
the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent
Implementation Method 2
CMP is a method for flattening a surface of an object to be polished (polishing object) such as a semiconductor substrate using a polishing composition (slurry) containing abrasive grains such as silica
Data Source
AI summary
Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed while reducing surface defects due to polishing. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent, wherein the content of the trialkylamine oxide is 3 mass ppm or more and 40 mass ppm or less with respect to the total mass of the polishing composition, and the pH is less than 5.