Polishing Composition Using Highly-Crystalline Metal Oxide Abrasives
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Solution Overview
Problem
Conventional polishing technologies for semiconductor devices fail to meet the demands of high polishing speed and defect suppression, such as scratches and dishing, particularly in chemical mechanical polishing processes involving metal layers like tungsten.
Innovation Solution
A polishing composition containing highly-crystalline metal oxide particles with a full width at half maximum of less than 1° in X-ray powder diffraction patterns is used, along with an oxidizing agent and a dispersant, to enhance polishing speed and reduce defect generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions are used, then polishing process can be performed, but polishing speed is insufficient and defects such as scratches and dishing occur
Solution Approach 1:
The patent changes the physical and chemical parameters of the abrasive grains by specifying highly-crystalline metal oxide particles with FWHM less than 1° in XRD patterns. This parameter change in crystal structure leads to improved polishing speed while reducing defect generation, resolving the contradiction between productivity and reliability
Solution Approach 2:
The patent uses composite polishing compositions containing highly-crystalline metal oxide particles combined with specific reagents and additives. This composite approach creates a synergistic effect that achieves both high polishing speed and low defect rates, simultaneously improving productivity and reliability
2Productivity
If higher polishing speed is pursued, then productivity improves, but defect generation such as scratches and dishing increases
Solution Approach 1:
By precisely controlling the crystal structure parameters of metal oxide particles (FWHM < 1° in XRD), the patent optimizes the balance between polishing aggressiveness and surface quality. This parameter optimization enables high polishing speed while minimizing harmful defects like scratches and dishing
3Manufacturing precision
If miniaturization of semiconductor devices is pursued, then device performance improves, but polishing precision requirements become stricter
Solution Approach 1:
The patent changes the abrasive grain parameters to highly-crystalline metal oxide with specific crystal structure (FWHM < 1°), which provides controlled material removal rates. This enables achievement of strict surface flatness requirements for miniaturized devices while maintaining manageable process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high polishing speed while effectively suppressing defects like scratches and dishing in semiconductor substrates, particularly those with metal layers like tungsten, thereby improving the reliability and yield of semiconductor devices.
Implementation Method 1
Chemical Mechanical Polishing (CMP) has been an essential technology for production processes of semiconductor devices
Implementation Method 2
it is possible to grind unevenness on the surface of the semiconductor substrate on the basis of a chemical reaction due to the reagent and a mechanical polishing effect due to the abrasive grains
Implementation Method 3
a mechanical polishing effect due to the abrasive grains
Implementation Method 4
the full width at half maximum of a peak portion having the maximum diffracted intensity in an X-ray powder diffraction pattern of the metal oxide particles
Implementation Method 5
X-ray powder diffraction pattern
Data Source
AI summary
A polishing composition includes crystalline metal oxide particles as abrasive grains, wherein the full width at half maximum of a peak portion having the maximum diffracted intensity in an X-ray powder diffraction pattern of the metal oxide particles is less than 1°. Thus, a polishing composition and a polishing method have high polishing speed and suppress defect generation such as a scratch and dishing, which causes to degrade reliability of a semiconductor apparatus in a polishing process of a semiconductor substrate, particularly in a chemical mechanical polishing process of a semiconductor substrate with a metal layer having tungsten, etc.; and a method produces the polishing composition.