Polishing Composition for Phase Change Layer Selectivity
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Solution Overview
Problem
Current semiconductor device fabrication techniques face challenges in achieving high polishing selectivity and uniformity between phase change layers and silicon containing dielectric materials during chemical mechanical polishing, leading to non-uniformity and reliability issues.
Innovation Solution
A polishing composition comprising an abrasive, a first additive with an amide and carboxyl group, and a second additive with sulfonic acid or sulfonate groups, along with a chelating agent, is used to enhance the polishing selectivity and uniformity by controlling the surface zeta potential and preventing residue re-adsorption, thereby increasing the polishing rate of phase change layers while maintaining low polishing rates for silicon containing dielectric materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing composition is used, then polishing process can be performed, but polishing selectivity between phase change layer and silicon containing dielectric material is insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the polishing slurry by incorporating specific additives (polymer additive with carboxyl groups at 0.1-10 wt%, sulfur-containing additive at 0.01-1 wt%) to alter the interaction mechanisms between polishing particles and different materials, thereby achieving enhanced polishing selectivity and uniformity
Solution Approach 2:
The patent creates a composite polishing composition by combining abrasive particles with specific polymer additives and sulfur-containing compounds, where each component contributes different functions: abrasives for material removal, polymers for selectivity control, and sulfur compounds for uniformity enhancement, resulting in superior polishing performance
2Productivity
If polishing rate of phase change layer is increased, then manufacturing efficiency improves, but non-uniformity and reliability issues occur
Solution Approach 1:
The patent optimizes the concentration parameters of key additives (polymer at 0.1-10 wt%, sulfur compound at 0.01-1 wt%) to achieve the optimal balance between polishing rate and uniformity, where the polymer enhances material removal while the sulfur compound ensures even distribution across the substrate surface
3Manufacturing precision
If polishing selectivity is enhanced, then phase change layer is polished uniformly, but polishing composition complexity increases
Solution Approach 1:
The patent uses carefully controlled concentrations of functional additives (polymer 0.1-10 wt%, sulfur compound 0.01-1 wt%) to achieve complex polishing behavior through simple compositional adjustments, where each additive performs specific functions at optimized levels
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution achieves improved polishing selectivity and uniformity, resulting in higher reliability of semiconductor devices by ensuring phase change layers are uniformly polished while protecting non-target layers, thus maintaining desired electrical characteristics.
Implementation Method 1
a polishing composition including an abrasive including one or more of silica and alumina
Implementation Method 2
a second additive that includes one or more of sulfonic acid, sulfonate, and sulfonate salt, a compositional ratio of the second additive falling within a range from 1 ppm to 100 ppm
Data Source
AI summary
A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.