Polishing Composition Selective Defect Removal via Polymer Clustering
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Solution Overview
Problem
Conventional polishing compositions are unable to selectively remove surface defects of specific sizes from semiconductor substrates, leading to insufficient removal of targeted defects during polishing.
Innovation Solution
A polishing composition comprising hydroxyethyl cellulose with a molecular weight of 500,000 to 1,500,000 and abrasive grains in a mass ratio of 0.0075 to 0.025, along with optional ammonia, which enhances the selective removal and wettability of surface defects by forming clusters with the abrasive grains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional polishing composition is used, then the polishing process can be performed, but it is impossible to selectively remove surface defects having specific sizes
Solution Approach 1:
The patent applies parameter changes by specifying a particular molecular weight range for hydroxyethyl cellulose (500,000 to 1,500,000) and a specific mass ratio range (0.0075 to 0.025) to achieve selective removal of surface defects of specific sizes. This precise parameter control enables the polishing composition to differentiate and remove defects based on their size characteristics.
Solution Approach 2:
The patent uses a composite material system combining hydroxyethyl cellulose with specific molecular weight characteristics and abrasive grains in a controlled mass ratio. This composite formulation creates a polishing composition that exhibits selective defect removal capability, where the interaction between the polymer and abrasive particles enables size-selective polishing action.
2Manufacturing precision
If the molecular weight of hydroxyethyl cellulose is not controlled within the specific range, then the composition is simpler to prepare, but the selective removal capability is lost
Solution Approach 1:
The patent establishes specific parameter ranges for hydroxyethyl cellulose molecular weight (500,000 to 1,500,000) and mass ratio (0.0075 to 0.025) to achieve the desired selective removal capability. These parameter specifications transform the manufacturing process from a general preparation to a controlled process that produces functionally differentiated polishing compositions.
3Manufacturing precision
If the mass ratio of hydroxyethyl cellulose to abrasive grains is outside the specified range, then the composition is easier to formulate, but the polishing performance for specific defect sizes is insufficient
Solution Approach 1:
The patent defines a specific mass ratio range (0.0075 to 0.025) for hydroxyethyl cellulose to abrasive grains to optimize selective defect removal performance. This parameter specification ensures that the polishing composition achieves the desired selectivity while maintaining practical formulation feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively reduces surface defects of specific sizes on semiconductor substrates, improving polishing efficiency and surface flatness by selectively removing larger defects while leaving smaller ones intact.
Implementation Method 1
the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less
Implementation Method 2
a water-soluble polymer, which is a component enhancing the wettability to semiconductor substrates
Data Source
AI summary
Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.