Polishing Composition for Semiconductor Substrate Cleaning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current cleaning methods after chemical mechanical polishing (CMP) are insufficient in removing impurities from semiconductor substrates, leading to potential electrical property degradation and device reliability issues.
Innovation Solution
A novel polishing composition containing an organic compound with a molecular weight of 100 or more, featuring at least one fluorine, nitrogen, or chlorine atom, or 3 or more hydroxyl groups, along with a pH adjusting agent, is used to enhance the cleaning effect by improving wettability and facilitating the removal of impurities without abrasive grains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning agents are used after CMP, then cleaning process is simple, but impurities are not sufficiently removed from substrate surface
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing slurry by incorporating specific organic compounds (polyethylene glycol with Mw 400-20,000 at 0.01-5 wt%, polyvinyl alcohol with Mw 10,000-200,000 at 0.01-5 wt%) along with abrasive grains and pH adjusters. This parameter modification enables the slurry to provide both polishing and cleaning functions, resolving the contradiction between cleaning effectiveness and process complexity by eliminating the need for separate cleaning steps.
Solution Approach 2:
The polishing slurry is designed to perform multiple functions: mechanical polishing through abrasive grains and simultaneous cleaning through organic compounds that prevent impurity re-adhesion. This multi-functionality allows a single step to achieve both surface flattening and impurity removal, improving cleaning effectiveness without adding process complexity.
2Manufacturing precision
If polishing slurry contains abrasive grains only, then polishing function is strong, but impurities re-adhere to substrate surface
Solution Approach 1:
The slurry uses composite material formulation combining inorganic abrasive grains (silica, alumina, or ceria with specific particle size distributions) with organic compounds (polyethylene glycol and/or polyvinyl alcohol). This composite structure provides dual functionality: abrasive grains maintain surface flatness through mechanical polishing while organic compounds prevent impurity re-adhesion by forming protective layers on the substrate surface.
Solution Approach 2:
The organic compounds in the slurry act as intermediaries between the abrasive grains and the substrate surface. They facilitate the polishing action while simultaneously preventing harmful impurity re-adhesion by modifying the surface properties and creating a barrier layer that repels contaminants.
3Reliability
If polishing slurry contains organic compounds for cleaning, then impurity removal improves, but polishing rate decreases
Solution Approach 1:
The invention optimizes the concentration parameters of organic compounds (polyethylene glycol at 0.01-5 wt% and polyvinyl alcohol at 0.01-5 wt%) to achieve the minimum effective amount for preventing impurity re-adhesion. This parameter control ensures sufficient cleaning effectiveness while minimizing the negative impact on polishing rate, thus maintaining productivity.
Solution Approach 2:
The slurry formulation provides different functional properties at different stages: abrasive grains dominate for mechanical polishing and surface flattening, while organic compounds become more prominent in the later stages for impurity removal and surface protection. This local quality differentiation in function timing allows maintaining high polishing rate while achieving effective cleaning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively removes impurities from the semiconductor substrate surface, improving cleaning efficiency and preventing re-adhesion, thereby enhancing device reliability and surface quality.
Implementation Method 1
improving wettability and facilitating the removal of impurities
Implementation Method 2
polishing a substrate comprising polysilicon which has been polished by using a polishing composition (A) comprising abrasive grains
Data Source
AI summary
The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.