Polishing Composition Scratch Reduction Semiconductor Wiring

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Solution Overview

Problem

Chemical mechanical polishing of semiconductor device wiring often results in scratches on conductor wiring due to abrasive grain aggregation and insoluble copper compounds, while attempts to reduce scratches can lead to increased step sizes between conductor and insulator layers.

Innovation Solution

A polishing composition containing an oxidizing agent and a scratch-reducing agent, represented by specific formulas, which selectively dissolves copper oxides and hydroxides to reduce scratching and prevent step size increase, along with abrasive grains and a polishing accelerator for enhanced removal rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional polishing compositions with abrasive grains are used to remove conductor layer outside portions, then polishing removal rate is improved, but scratches appear on conductor wiring due to abrasive grain aggregation

Engineering Contradiction:

Improvepolishing removal rateVSAvoidscratch reduction on conductor wiring

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent introduces a specific organic compound (formula (1)) as an intermediary substance that mediates between abrasive grains and copper surfaces. This compound adsorbs onto copper surfaces and forms a protective layer, preventing direct contact between abrasive grains and conductor wiring, thereby reducing scratches while maintaining polishing efficiency

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the chemical composition parameters of the polishing slurry by incorporating a specific organic compound with defined molecular structure (formula (1)) containing nitrogen and oxygen atoms. This chemical parameter change modifies the interaction between polishing components and conductor surfaces, reducing scratching while preserving removal rate

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If measures are taken to reduce scratches by removing coarse abrasive grains or adding protective film-forming substances, then scratch reduction is improved, but step size between conductor and insulator layers increases

Engineering Contradiction:

Improvescratch reduction on conductor wiringVSAvoidstep size between conductor and insulator layers

Core Design Contradiction:

Manufacturing precisionVSShape

Solution Approach 1:

The patent applies local quality by having the organic compound (formula (1)) selectively interact with different surfaces during polishing. The compound preferentially adsorbs on copper surfaces to form protective films, while allowing controlled removal of barrier layer and insulator layer materials, thus locally protecting conductor wiring while maintaining overall polishing uniformity and minimizing step formation

Inventive Principle:

Principle #3Local quality

3Productivity

If polishing composition includes both oxidizing agent and abrasive grains to increase removal rate, then productivity is improved, but insoluble copper compounds form causing increased scratching

Engineering Contradiction:

Improvepolishing removal rateVSAvoidinsoluble copper compounds causing scratches

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful effect of oxidizing agents that create insoluble copper compounds into a beneficial process. The organic compound (formula (1)) complexes with copper ions generated by oxidation, keeping them soluble and preventing precipitation of scratching copper compounds. Thus, the oxidation process continues to provide removal rate enhancement without generating harmful insoluble byproducts

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively reduces scratches on conductor wiring without significantly increasing step sizes between conductor and insulator layers, maintaining efficient polishing rates and material cost control.

Implementation Method 1

a polishing composition that contains an oxidizing agent and a scratch-reducing agent

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

portions of a conductor layer that are located in trenches and are not supposed to be removed end up being removed by polishing more rapidly than an insulator layer

Methodology Applied

Scientific EffectComplexation dissolution: Solvation

Implementation Method 3

a polishing composition containing two types of abrasive grains of different sizes

Methodology Applied

Scientific EffectAbrasion: Abrasion

Data Source

PatentUS9150758B2Polishing composition, polishing method using same, and method for producing semiconductor device

Publication Date: 2015.10.06 FUJIMI INCORPORATED

AI summary

The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below.In the formulas, X1 and X2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.