Polishing Composition for Silicon Nitride Selectivity
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) technologies lack selectivity in polishing speed for materials containing silicon-nitrogen bonds, such as silicon nitride films, leading to inefficient processing in semiconductor device production.
Innovation Solution
A polishing composition incorporating organic acid-immobilized silica and a selection ratio improver, represented by specific compounds or polymers, is used to enhance the ratio of polishing speed for materials with silicon-nitrogen bonds relative to other materials, thereby improving selectivity and processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CMP technology is used, then general polishing can be performed, but the polishing speed ratio for silicon nitride film cannot be sufficiently improved
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing slurry by incorporating specific organic acid-immobilized silica particles and selection ratio improvers. This chemical parameter modification enables selective enhancement of polishing speed for silicon nitride films while controlling polishing rates for other materials, directly resolving the technical contradiction between manufacturing precision and productivity
Solution Approach 2:
The invention uses composite polishing slurry containing organic acid-immobilized silica particles combined with specific selection ratio improvers (such as polyacrylic acid, polyaspartic acid, or their salts). This composite material approach creates synergistic effects that selectively enhance polishing performance for silicon nitride films, achieving both high manufacturing precision and processing efficiency
2Productivity
If polishing composition is optimized for high polishing speed, then productivity improves, but selectivity for different materials deteriorates
Solution Approach 1:
The invention introduces selection ratio improvers (such as polyacrylic acid, polyaspartic acid, or their salts) as intermediary substances that mediate between the polishing slurry and different materials. These intermediaries selectively interact with silicon nitride films through chemical affinity, enabling high polishing speeds while maintaining excellent selectivity, thus resolving the contradiction between productivity and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution achieves high selectivity in polishing speed for materials with silicon-nitrogen bonds, allowing for precise control and desired processing states in semiconductor device production, enhancing the processing efficiency and accuracy.
Implementation Method 1
Chemical mechanical polishing (CMP) methods constitute one class of such technologies
Data Source
AI summary
To provide a technology by which, on the occasion of polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b) can be increased.The polishing composition of the present invention is a polishing composition used for polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the polishing composition including: an organic acid-immobilized silica; and a particular selection ratio improver for increasing the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b).