Metal Polishing Liquid for Copper Embedded Patterns

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Solution Overview

Problem

Conventional polishing liquids for copper type metals fail to simultaneously achieve high polishing rates and low etching rates, which are necessary for forming embedded patterns with high reliability in microfabrication processes.

Innovation Solution

A metal polishing liquid comprising a metal solubilizer containing an amino acid, a compound with a benzotriazole skeleton, and an acrylic acid polymer with a weight average molecular weight of 10,000 or more, with a mass ratio of 1:1 to 1:5, which balances polishing rates and etching rates, and optionally includes abrasive grains and an oxidizing agent.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a metal solubilizer and protective film-forming agent are added to increase polishing rate, then the polishing rate increases, but etching of metal in concave parts occurs leading to reduced planarization effects

Engineering Contradiction:
Improvepolishing rateVSAvoidplanarization effect
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention applies different functional properties to different regions of the polishing liquid system: the protective film-forming agent selectively forms protective films on metal surfaces in concave parts to prevent etching, while the metal solubilizer acts on convex parts to enable material removal. This local differentiation of chemical actions resolves the contradiction between achieving high polishing rates and maintaining planarization effects.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention optimizes the concentration parameters of multiple components including metal solubilizer (0.01-5 wt%), protective film-forming agent (0.01-5 wt%), and abrasive grains (0.1-10 wt%) to achieve a balanced chemical mechanical polishing process. By precisely controlling these parameter ranges, the system achieves both high polishing rate and low etching rate simultaneously.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If conventional polishing liquids are used, then the process is simple, but both high polishing rates and low etching rates cannot be simultaneously achieved

Engineering Contradiction:
Improvepolishing rateVSAvoidembedded pattern formation reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The invention creates a composite polishing liquid system that integrates multiple functional components: metal solubilizer (amino acid or carboxylic acid), protective film-forming agent (benzotriazole derivative), abrasive grains, and oxidizing agent. This composite formulation synergistically achieves both high polishing rates and low etching rates, thereby ensuring reliable embedded pattern formation in copper type metal interconnect structures.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The protective film-forming agent acts as an intermediary substance that mediates between the metal solubilizer and the metal surface. It forms a protective film on metal surfaces, particularly in concave parts, preventing excessive etching while allowing the metal solubilizer to effectively remove material from convex parts. This intermediary protective film enables simultaneous achievement of high polishing rate and low etching rate.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polishing liquid achieves high polishing rates while minimizing etching, enabling the formation of embedded patterns with higher reliability and excellent surface flatness.

Implementation Method 1

component A: a metal solubilizer containing an amino acid

Methodology Applied
Scientific EffectComplexation: Chemical Bonding

Implementation Method 2

component B: a compound having the benzotriazole skeleton

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 3

component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more

Methodology Applied
Scientific EffectPhysical barrier formation: Absorption (physical)

Implementation Method 4

a metal polishing liquid is disclosed of which the first protective film-forming agent described above is at least one type selected from benzotriazole and its derivatives

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS10037894B2Polishing liquid for metal and polishing method
Publication Date: 2018.07.31 RESONAC CORP
  • US10037894B2 patent drawing
  • US10037894B2 patent drawing

AI summary

The present invention relates to a metal polishing liquid for polishing at least a part of metal in a substrate having the metal, comprising, component A: a metal solubilizer containing amino acids, component B: compounds having the benzotriazole skeleton, and component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more, and having the mass ratio between the component B and the component C, (component B:component C), to be 1:1 to 1:5. Use of the metal polishing liquid can simultaneously yield high polishing rates and low etching rates at higher level, enabling to form an embedded pattern with higher reliability.