Chemical Mechanical Polishing Pad Hard Soft Phase Structure
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Solution Overview
Problem
Current polishing pads for semiconductor and magnetic substrates face challenges in achieving superior planarization and defectivity performance, particularly for silicon oxide/silicon nitride applications, with existing pads either compromising on planarity or introducing scratches.
Innovation Solution
A polishing pad with a polymeric matrix having a two-phase structure, comprising a hard phase and a soft phase, and a top surface with polymeric asperities formed through conditioning, providing a bulk ultimate tensile strength of at least 6,500 psi and a hard segment content of 45-80 weight percent, which enhances both planarization and defectivity performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hard cast polyurethane polishing pads are used to improve planarization, then planarity is improved, but defectivity worsens due to increased scratching
Solution Approach 1:
The polishing pad uses a composite polymeric matrix containing both hard segments (45-80 wt%) and soft segments, creating a two-phase structure that combines the planarization capability of hard materials with the defect-reducing properties of soft materials. This composite approach allows simultaneous achievement of good planarity and low defectivity.
Solution Approach 2:
The polishing pad surface develops localized polymeric asperities through conditioning that extend from the matrix surface. These asperities provide localized hard contact points for planarization while the surrounding softer matrix material reduces overall scratching, creating different local properties within the same polishing surface.
2Manufacturing precision
If polishing pads with high hard segment content are used to improve planarization performance, then planarization ability is improved, but defectivity performance deteriorates
Solution Approach 1:
The patent employs a composite polymeric matrix with controlled hard segment content (45-80 wt%) embedded in a soft matrix. This composite structure allows the hard segments to provide planarization ability while the soft matrix prevents excessive scratching, resolving the contradiction between planarization performance and defectivity.
Solution Approach 2:
The patent optimizes the hard segment content parameter within a specific range (45-80 wt%) rather than using maximum hard content. This parameter optimization ensures sufficient planarization ability while maintaining low defectivity, demonstrating that intermediate parameter values can resolve contradictions between opposing performance requirements.
3Productivity
If existing polishing pads are used for silicon oxide/silicon nitride applications, then polishing can be performed, but planarization and defectivity performance are compromised
Solution Approach 1:
The polishing pad uses a composite polymeric matrix with hard and soft phases specifically designed for silicon oxide/silicon nitride applications. This composite structure provides both the mechanical integrity needed for productivity and the surface properties required for superior planarization and defectivity performance in these specific applications.
Solution Approach 2:
The conditioning process creates localized polymeric asperities on the pad surface that provide enhanced planarization for silicon oxide/silicon nitride applications. These localized surface modifications improve performance for specific applications without compromising overall polishing capability or introducing excessive defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polishing pad achieves improved planarization and reduced defectivity, maintaining surface structure for demanding applications like electrochemical mechanical planarization, while minimizing scratches and maintaining surface integrity.
Implementation Method 1
a polishing pad in combination with a polishing solution, such as an abrasive-containing polishing slurry or an abrasive-free reactive liquid, removes excess material in a manner that planarizes or maintains flatness
Implementation Method 2
the polishing pad forming additional polymeric polishing asperities from the polymeric matrix with wear or conditioning of the top polishing surface
Data Source
AI summary
The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities are from a polymeric material having at least 45 weight percent hard segment and a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa). And the polymeric matrix has a two phase structure, a hard phase and a soft phase with an average area of the hard phase to average area of the soft phase ratio of less than 1.6.