Polishing Pad with Pre-determined Structures for CMP

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Solution Overview

Problem

Conventional polishing pads for chemical mechanical planarization (CMP) in semiconductor manufacturing suffer from non-repeatability of surface asperity, frequent re-conditioning needs, and high maintenance costs due to micron-sized random peaks that dull quickly and cause wafer non-uniformity and defects.

Innovation Solution

The development of polishing pads with pre-determined shape and size polishing structures formed at specific locations, using machining techniques to create a substantially constant contact area that maintains consistent asperity throughout the pad's life, eliminating the need for frequent re-conditioning and improving CMP uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional polishing pads with micron-sized random peaks are used, then initial polishing capability is provided, but the surface asperity becomes non-repeatable and dulls quickly requiring frequent re-conditioning

Engineering Contradiction:
Improverepeatability of surface asperityVSAvoidpad life between re-conditioning
Core Design Contradiction:
ReliabilityVSDuration of action of moving object

Solution Approach 1:

The polishing pad incorporates polishing structures with pre-determined shapes and sizes that are formed at pre-determined locations before the pad is put into service. This preliminary configuration ensures consistent surface asperity from the first wafer to the last, eliminating the non-repeatability and rapid dulling associated with conventional random peak structures.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the fundamental parameters of the polishing surface from random micron-sized peaks to controlled macro-scale structures with predetermined geometry. These structures maintain consistent contact area and asperity characteristics throughout the pad's operational life, dramatically improving reliability and extending the interval between re-conditioning operations.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If frequent re-conditioning is performed to maintain polishing quality, then wafer uniformity is preserved, but operation and maintenance costs increase

Engineering Contradiction:
Improvewafer planarization uniformityVSAvoidoperational efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

By pre-configuring the polishing structures with predetermined shapes and locations, the system achieves consistent polishing performance across the entire pad life without requiring intermediate re-conditioning interventions, thereby maintaining wafer uniformity while maximizing productivity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The polishing structures are designed to self-maintain their functional characteristics throughout operation. The predetermined geometry ensures that contact area and asperity remain consistent without external intervention, allowing continuous high-precision operation and eliminating the need for frequent maintenance停机.

Inventive Principle:
Principle #25Self-service

3Ease of manufacture

If conventional polishing pads are used, then basic polishing function is achieved, but maintenance costs are high due to frequent re-conditioning

Engineering Contradiction:
Improvepad manufacturing simplicityVSAvoidpad re-conditioning frequency
Core Design Contradiction:
Ease of manufactureVSEase of repair

Solution Approach 1:

The polishing structures are formed during pad manufacturing with predetermined shapes and locations, establishing the functional geometry in advance. This eliminates the need for subsequent re-conditioning operations, transforming a complex maintenance requirement into a simple, maintenance-free operation.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11685013B2Polishing pad for chemical mechanical planarization
Publication Date: 2023.06.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11685013B2 patent drawing
  • US11685013B2 patent drawing
  • US11685013B2 patent drawing

AI summary

A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.