Polishing Composition Zeta Potential Control for High Dielectric Layer Removal
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Solution Overview
Problem
The demand for a high dielectric constant material polishing technique has increased, but existing chemical mechanical polishing (CMP) methods struggle to achieve a high removal rate for high dielectric constant layers due to insufficient electrostatic interaction between abrasive grains and the polishing composition.
Innovation Solution
A polishing composition containing abrasive grains and organic acid, where the zeta potential of the abrasive grains and the high dielectric constant layer are optimized to ensure a positive zeta potential difference of ≤−5 mV, enhancing electrostatic interaction and removal rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP methods are used for high dielectric constant layers, then the polishing process can be performed, but the removal rate is insufficient
Solution Approach 1:
The patent applies parameter changes by optimizing the zeta potential of abrasive grains and the surface potential of the high dielectric constant layer. Specifically, it controls the zeta potential difference (Y-X) to be ≤−5 mV, where X is the zeta potential of abrasive grains and Y is the zeta potential of the high dielectric constant layer. This parameter optimization enhances electrostatic interaction, thereby significantly improving the removal rate of high dielectric constant layers during CMP processing.
2Productivity
If the zeta potential difference is optimized to enhance electrostatic interaction, then the removal rate increases, but the polishing composition formulation becomes more complex
Solution Approach 1:
The patent optimizes specific parameters (zeta potential of abrasive grains and surface potential of the high dielectric constant layer) to achieve enhanced electrostatic interaction. By controlling the zeta potential difference to be ≤−5 mV, the patent improves removal rate while maintaining a manageable formulation approach through systematic parameter control rather than complex compositional changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized polishing composition significantly increases the removal rate of high dielectric constant layers by increasing the frequency of abrasive grain contact, while maintaining surface quality and reducing defects.
Implementation Method 1
enhancing electrostatic interaction and removal rate
Implementation Method 2
when a zeta potential of the abrasive grain in the polishing composition is set as X [mV], and a zeta potential of the high dielectric constant layer during polishing using the polishing composition is set as Y [mV], X is positive, and Y−X≤−5 is established
Implementation Method 3
the wiring layer is removed by mechanical friction between the polishing agent and the wiring layer
Data Source
AI summary
A polishing composition according to the present invention is used to polish an object to be polished including a high dielectric constant layer, in which the polishing composition contains an abrasive grain, water, and organic acid, when a zeta potential of the abrasive grain in the polishing composition is set as X [mV], and a zeta potential of the high dielectric constant layer during polishing using the polishing composition is set as Y [mV], X is positive, and Y−X≤−5 is established.