Poly(styrene)-b-poly(siloxane) Annealing for Sub-45 nm Patterning

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Solution Overview

Problem

Current methods for patterning nanoscale features using block copolymers face challenges in controlling lateral placement and long-range ordering, and conventional poly(styrene)-b-poly(dimethylsiloxane) block copolymers lack effective thermal annealing capabilities, limiting their use in directed self-assembly applications, especially for sub-45 nm dimensions.

Innovation Solution

A method involving a poly(styrene)-b-poly(siloxane) block copolymer film composition with an antioxidant, applied to a substrate, undergoes thermal annealing at 275 to 350°C under a gaseous atmosphere, followed by removal of the poly(styrene) block to convert the poly(siloxane) block to SiOx, enabling the formation of sublithographic features with precise control over pattern orientation and pitch.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If poly(styrene)-b-poly(dimethylsiloxane) block copolymers are used for directed self assembly, then nanoscale patterning capability is achieved, but thermal annealing effectiveness is lost

Engineering Contradiction:

Improvenanoscale patterning precisionVSAvoidthermal annealing capability

Core Design Contradiction:

Manufacturing precisionVSTemperature

Solution Approach 1:

The patent changes the chemical composition parameters of the block copolymer by replacing poly(dimethylsiloxane) with poly(siloxane) containing oxidizable groups. This parameter change enables the material to undergo thermal annealing and oxidative conversion, transforming it from a thermally unstable material into one that can effectively process through thermal annealing while maintaining nanoscale patterning precision.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite material system combining poly(styrene) with poly(siloxane) containing oxidizable groups. This composite structure integrates the self-assembly capabilities of block copolymers with the thermal stability and oxidative convertibility of siloxane groups, achieving both nanoscale patterning and thermal annealing effectiveness simultaneously.

Inventive Principle:

Principle #40Composite materials

2Stability of the object's composition

If conventional block copolymer methods are used, then self-assembly into micro domains occurs, but control over lateral placement and long-range ordering is insufficient

Engineering Contradiction:

Improveself-assembly formationVSAvoidlateral placement control

Core Design Contradiction:

Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent modifies the chemical parameters of the copolymer composition by incorporating poly(siloxane) with oxidizable groups and controlling the molecular weight (5 to 1,000 kg/mol). These parameter changes enhance the material's responsiveness to thermal and oxidative processing, enabling superior control over lateral placement and long-range ordering while preserving self-assembly capabilities.

Inventive Principle:

Principle #35Parameter changes

3Length of moving object

If feature size is reduced below lithographic limits, then sublithographic dimensions are achieved, but control over pattern orientation and pitch becomes difficult

Engineering Contradiction:

Improvefeature dimensionVSAvoidpattern orientation control

Core Design Contradiction:

Length of moving objectVSManufacturing precision

Solution Approach 1:

The patent replaces conventional lithographic mechanical patterning systems with a chemical self-assembly system. By using block copolymer self-assembly combined with thermal annealing and oxidative conversion, the method achieves sublithographic feature dimensions (below 45 nm) with precise control over pattern orientation and pitch through chemical mechanisms rather than mechanical lithographic processes.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the creation of highly resolved line and space features with smaller dimensions, enabling advanced technologies in semiconductor chip design and manufacturing by overcoming limitations in etch resistance and orientation control, and facilitating the formation of sublithographic SiOx features.

Implementation Method 1

annealing the film by heating the film at 275 to 350° C. under a gaseous atmosphere for a period of 1 second to 4 hours

Methodology Applied

Scientific EffectThermal annealing: Annealing

Implementation Method 2

treating the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS8821739B2High temperature thermal annealing process

Publication Date: 2014.09.02 DDP SPECIALTY ELECTRONICS MATERIALS US LLC

AI summary

A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.