Polyacid Salt Resist Composition for Sub-100 Nm EUV Patterning
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Solution Overview
Problem
Existing resist materials do not effectively utilize polyacid salts for pattern formation, particularly in applications requiring high light absorption and precise patterning with electron beams or extreme ultraviolet exposure.
Innovation Solution
A resist material containing a polyacid salt, optionally with an onium cation and an organic solvent, is used to form patterns through exposure to light or electron beams, followed by development with specific solvents or dry etching using halogen-containing gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist materials are used, then existing pattern formation is achieved, but light absorption efficiency is insufficient and patterning precision for 100 nm or less features cannot be achieved
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by incorporating polyacid salts with specific molecular structures and compositions. This enables the material to achieve both high light absorption efficiency and precise patterning capability for 100 nm or less features, resolving the contradiction between manufacturing precision and energy absorption.
Solution Approach 2:
The patent creates a composite resist material system combining polyacid salts with specific cations (such as organic sulfonium, iodonium, or quaternary ammonium cations) and optional organic solvents. This composite structure enables simultaneous optimization of light absorption properties and patterning precision that cannot be achieved with conventional single-component resist materials.
2Use of energy by moving object
If polyacid salt is incorporated into resist material, then light absorption ability is improved, but material stability and handling properties may deteriorate
Solution Approach 1:
The patent optimizes the molecular structure parameters of the polyacid salt by selecting specific early transition metals (Mo, W, Nb, Ta, V) and controlling the ratio of metal atoms to oxygen atoms. This structural parameter optimization maintains material stability while preserving high light absorption ability.
Solution Approach 2:
The patent introduces onium cations (organic sulfonium, iodonium, or quaternary ammonium) as intermediary components that stabilize the polyacid salt structure. These cations act as mediators that maintain both the light absorption properties of the polyacid anion and the overall material stability required for practical handling and storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist material achieves high light absorption and enables precise patterning with features down to 100 nm or less, suitable for electron beam and EUV exposure.
Implementation Method 1
a polyacid salt that can highly absorb a light source, such as DUV, XUV, EUV, or an electron beam
Implementation Method 2
a polyacid salt that can highly absorb a light source, such as DUV, XUV, EUV, or an electron beam
Data Source
Figure 1~2
AI summary
To provide a novel resist material containing a polyacid salt, a pattern forming method, and a patterned structure.