Polychrome Wafer Structure With Shared ASICs for Micro-LED Pixels
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Solution Overview
Problem
Existing micro-LED display technologies face challenges in achieving high brightness and resolution with small screen sizes, and previous methods for attaching light-emitting devices to substrates suffer from coating dependency and light leakage, affecting the final spectrum of light.
Innovation Solution
A polychrome wafer structure is developed, where multiple epitaxial dies emitting different colors are bonded to a common monolithic integrated circuit, allowing a single ASIC to drive multiple light-emitting devices, minimizing electrical driving systems and power consumption, and using color converters like filters or quantum dots to achieve desired colors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If multiple separate ASICs are used to drive different color light-emitting devices, then each color can be independently controlled, but the device complexity and power consumption increase
Solution Approach 1:
The patent combines multiple color light-emitting devices (red, green, blue LEDs) and their driving circuits onto a single ASIC chip. This integration eliminates the need for multiple separate ASICs, reducing device complexity and power consumption while maintaining independent color control capability through integrated pixel circuits that can independently modulate each sub-pixel.
Solution Approach 2:
The single ASIC chip performs multiple functions by integrating driving circuits for different color LEDs, color conversion control, and pixel modulation capabilities. The universal chip handles all color channels and conversion processes, replacing what would traditionally require multiple specialized ASICs.
2Ease of manufacture
If conformal coating is applied to convert light wavelengths, then color conversion can be achieved, but coating dependency and light leakage occur affecting the final spectrum
Solution Approach 1:
The patent introduces color conversion layers (phosphor materials or quantum dots) as intermediary elements between the blue LED and the final displayed color. These conversion layers efficiently transform specific wavelengths while maintaining spectral purity, avoiding the light leakage issues associated with conformal coating methods.
3Manufacturing precision
If high resolution displays with pixel size below 10 microns are fabricated, then display quality improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the display into sub-pixels (red, green, blue) that are integrated onto a single ASIC chip. This segmentation approach allows for precise control of each sub-pixel at below 10 micron scales while maintaining manufacturability through standardized fabrication processes for each color channel.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-resolution, high-brightness micro-LED displays with reduced form factor and power consumption, while improving color rendering and luminous efficiency, and allowing for the fabrication of pixels below 10 microns.
Implementation Method 1
first light-emitting devices configured to emit light of a first color and at least a plurality of second light-emitting devices configured to emit light of a second color
Implementation Method 2
light-emitting devices configured to emit light
Implementation Method 3
converting the light emitted by any of the first light-emitting devices and/or any of the second light-emitting devices to a desired color
Data Source
AI summary
A polychrome wafer structure (100,200,200″) comprising a plurality of structured first epitaxial dies (102) having first light-emitting devices (107) configured to emit light of a first color, at least a plurality f structured second epitaxial dies (103) having second light-emitting devices (107′) configured to emit light of a second color. The plurality of the structured first epitaxial dies (102) and the plurality of the structured second epitaxial dies (103) are bonded on a target wafer (507) with a plurality of common monolithic integrated circuits in a manner that the at least one first die and the at least one second die is connected to common monolithic integrated (101) one circuit for simultaneously driving at least one first epitxial die (102) having light-emitting device (107) and at least one second epitaxial die (103) having light-emitting device (107′) by the respective one common monolithic integrated circuit (101).