Polycrystalline Silicon Contacts with ARC Surface-Recombination Control

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Solution Overview

Problem

Conventional high-temperature firing of conductive paste in polycrystalline silicon solar cells leads to high surface recombination, limiting efficiency gains.

Innovation Solution

A fabrication process involving high-temperature firing of conductive paste followed by a low-temperature anneal after anti-reflective coating deposition, which forms metal lines beneath the ARC layer, maintaining low surface recombination and enabling efficient conductive contacts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high-temperature firing of conductive paste is performed, then conductive contact formation is improved, but surface recombination increases

Engineering Contradiction:
Improveconductive contact formationVSAvoidsurface recombination
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by forming the anti-reflective coating layer before the high-temperature firing process. This pre-formed layer acts as a protective barrier that will withstand the subsequent high-temperature treatment, allowing the conductive paste to be fired at high temperatures to form reliable conductive contacts while the pre-existing ARC layer prevents excessive surface recombination from occurring during the firing process.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If high-temperature firing is used to form conductive contacts, then contact conductivity is improved, but solar cell efficiency deteriorates due to surface recombination

Engineering Contradiction:
Improvecontact conductivityVSAvoidsolar cell efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent converts the potentially harmful high-temperature firing process into a beneficial outcome by having the anti-reflective coating layer already in place before firing. The ARC layer, which is normally designed to reduce reflection and improve light absorption, is repurposed here as a thermal and chemical barrier during the firing process, enabling high-temperature processing that forms excellent conductive contacts while the layer itself protects against the harmful effects that would otherwise reduce solar cell efficiency.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process allows for high-temperature firing while minimizing surface recombination, enhancing the efficiency and cost-effectiveness of polycrystalline silicon solar cells.

Implementation Method 1

firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact

Methodology Applied
Scientific EffectHigh-temperature firing: Heating

Implementation Method 2

forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact

Methodology Applied
Scientific EffectCoating deposition: Deposition (physical)

Implementation Method 3

a low-temperature anneal after anti-reflective coating deposition

Methodology Applied
Scientific EffectLow-temperature anneal: Annealing

Data Source

PatentUS20250228034A1Conductive contacts for polycrystalline silicon features of solar cells
Publication Date: 2025.07.10 MAXEON SOLAR PTE LTD
  • US20250228034A1 patent drawing
  • US20250228034A1 patent drawing
  • US20250228034A1 patent drawing

AI summary

Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.