Polycrystallized Silicon Seed Layer for Oxide Film Formation
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Solution Overview
Problem
The strong oxidizing power of reactive gases during the semiconductor manufacturing process can adversely affect the base film, leading to oxidation and degradation of the underlying film.
Innovation Solution
A technique involving the formation of a seed layer in an amorphous state on a substrate, followed by polycrystallization through heat processing, and a cyclic process using a source gas and oxygen-containing and hydrogen-containing gases, where these gases are supplied non-simultaneously to form an oxide film, thereby suppressing the adverse effects of reactive gases on the base film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a reactive gas with strong oxidizing power is supplied to form an oxide film, then the oxidation efficiency is improved, but the base film is adversely affected and oxidized
Solution Approach 1:
An amorphous silicon seed layer is introduced as an intermediary between the base film and the oxide film. This seed layer acts as a protective barrier that prevents the reactive oxygen-containing gas from directly contacting and oxidizing the base film, while still allowing the oxidation process to proceed efficiently on the seed layer surface to form the desired oxide film.
Solution Approach 2:
The amorphous silicon seed layer is formed in advance before the oxide film formation process. This preliminary action creates a protective interface that shields the base film from subsequent exposure to strong oxidizing gases, enabling the use of highly reactive gases without damaging the underlying base film structure.
2Reliability
If the seed layer thickness is reduced to improve device performance, then the electrical characteristics are improved, but the protective effect on the base film is weakened
Solution Approach 1:
The seed layer is transformed from a crystalline structure to an amorphous structure through controlled deposition parameters. This parameter change enables the seed layer to provide effective protection at reduced thicknesses, as the amorphous structure offers superior barrier properties against oxygen diffusion compared to crystalline structures, thus maintaining protective function while improving electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the oxidation of the base film, improves the electrical characteristics, and enhances the quality of the silicon oxide film by forming a polycrystallized silicon seed layer that acts as a barrier, allowing for thinner seed layer thickness and improved device performance.
Implementation Method 1
forming a seed layer in an amorphous state on a substrate by supplying a source gas to the substrate
Implementation Method 2
polycrystallizing the seed layer by processing the seed layer by heat
Implementation Method 3
supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate, wherein (c-1) and (c-2) are non-simultaneously performed
Data Source
AI summary
According to one of the embodiments of the present disclosure, there is provided a technique that includes: (a) forming a seed layer in an amorphous state on a substrate by supplying a source gas to the substrate; (b) polycrystallizing the seed layer by processing the seed layer by heat; and (c) performing a cycle a predetermined number of times to form an oxide film on a polycrystallized seed layer and to oxidize the polycrystallized seed layer, the cycle including: (c-1) supplying the source gas to the substrate; and (c-2) supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate, wherein (c-1) and (c-2) are non-simultaneously performed.