Polycyclic Aromatic Monomer Hardmask for Etch Resistance
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns with excellent profiles on semiconductor substrates, particularly due to difficulties in achieving heat resistance and etch resistance in hardmask layers during multiple etching processes, which leads to out-gas generation.
Innovation Solution
A monomer for a hardmask composition represented by Chemical Formula 1, featuring a polycyclic aromatic group linked with an epoxy group, is used to form a hardmask layer through heat-treating, which reduces out-gas generation and enhances etch resistance by improving cross-linking density, allowing for the formation of a thin film with excellent chemical and etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hardmask layer is formed to provide heat resistance and etch resistance during multiple etching processes, then pattern transfer capability is improved, but out-gas generation increases due to poor cross-linking
Solution Approach 1:
The patent modifies the chemical composition parameters of the hardmask material by incorporating specific monomers with polycyclic aromatic groups and reactive functional groups. This changes the cross-linking density and thermal properties of the hardmask layer, enabling it to maintain structural integrity at etching temperatures while reducing out-gas generation through improved molecular network formation.
Solution Approach 2:
The patent creates a composite hardmask system by combining multiple functional components: polycyclic aromatic monomers for thermal stability, epoxy groups for cross-linking, and other functional groups for etch resistance. This composite approach achieves both high pattern transfer capability and reduced out-gas generation through synergistic material properties.
2Temperature
If cross-linking density is increased to reduce out-gas generation, then heat resistance is improved, but etch resistance may deteriorate
Solution Approach 1:
The patent applies different functional groups at different molecular locations within the hardmask structure. Polycyclic aromatic groups provide localized thermal stability, while epoxy groups provide localized cross-linking for heat resistance, and other functional groups (such as amino or hydroxy groups) provide localized etch resistance. This spatial differentiation of functions allows simultaneous achievement of heat resistance and etch resistance.
Solution Approach 2:
The patent uses a composite molecular structure containing multiple functional groups that work together: polycyclic aromatic groups for thermal stability, epoxy groups for cross-linking density control, and additional functional groups for etch resistance. This composite material approach balances heat resistance and etch resistance by combining materials with complementary properties.
3Device complexity
If conventional photoresist layer is used directly on material layer, then process simplicity is maintained, but fine pattern formation capability deteriorates
Solution Approach 1:
The patent introduces a hardmask layer as an intermediary between the photoresist layer and the material layer. This intermediate layer serves as a bridge that enables fine pattern transfer: the photoresist defines the pattern, the hardmask layer provides the necessary thermal and etch resistance for precise pattern transfer during etching, and the material layer receives the final pattern. This intermediary structure resolves the contradiction between process simplicity and fine pattern formation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition with the monomer achieves reduced out-gas generation and improved etch resistance, enabling the formation of high-quality patterns with enhanced chemical resistance and uniformity, even at low temperatures.
Implementation Method 1
The hardmask composition has reduced out-gas generation due to excellent cross-linking
Implementation Method 2
heat-treating the hardmask composition to form a hardmask layer
Data Source
AI summary
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.In the above Chemical Formula 1,A, A′ , X, Y, I, m and n are the same as described in the detailed description.