Polyester Photoresist Composition for Developer-Free EUV Patterning

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Solution Overview

Problem

The use of aqueous developers in EUV photolithography processes leads to pattern collapse and defects due to particle interaction, necessitating a solution to prevent such issues.

Innovation Solution

A photoresist composition comprising a photosensitive polymer with a polyester group, a photoacid generator (PAG), and a solvent, which allows for pattern formation without a developing process by decomposing and vaporizing the polyester group during baking, thereby preventing pattern collapse and defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If an aqueous developer is used in the EUV photolithography process, then the development process can be performed, but pattern collapse and defects occur due to particle interaction

Engineering Contradiction:

Improvedevelopment processVSAvoidpattern quality

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent extracts and eliminates the development process from the EUV photolithography workflow by using a photoresist composition that directly forms patterns through baking without requiring aqueous developer treatment, thereby preventing pattern collapse and particle-related defects

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the chemical composition parameters of the photoresist by using a polyester-based photosensitive polymer with specific functional groups that enable direct pattern formation through thermal decomposition rather than chemical development

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If a developing process is used to form patterns, then pattern formation can be achieved, but pattern collapse and particle defects are caused

Engineering Contradiction:

Improvepattern formationVSAvoidpattern collapse and defects

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful effect of requiring a development process into a benefit by designing a photoresist that uses thermal decomposition of the polyester main chain to directly form patterns, turning the potential harm of particle interaction into a beneficial particle-free processing method

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent replaces the chemical development mechanism (aqueous developer) with a thermal decomposition mechanism (baking process), substituting one action system with another that avoids the harmful interactions of aqueous developers

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Ease of operation

If a photoresist composition without polyester group is used, then conventional development can be performed, but pattern collapse occurs due to aqueous developer interaction

Engineering Contradiction:

Improvephotolithography processVSAvoidpattern stability

Core Design Contradiction:

Ease of operationVSReliability

Solution Approach 1:

The patent performs preliminary action by incorporating the polyester-based photosensitive polymer into the photoresist composition before the photolithography process, enabling the material to self-decompose and form patterns during baking without requiring subsequent aqueous developer treatment

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents pattern collapse and defects by eliminating the need for a developing process, ensuring stable pattern formation in EUV photolithography.

Implementation Method 1

a photoacid generator (PAG)

Methodology Applied

Scientific EffectPhotoacid generation: Photopolymerisation

Implementation Method 2

removing the exposed region of the photoresist film by baking the photoresist film

Methodology Applied

Scientific EffectThermal decomposition and vaporization: Pyrolysis

Data Source

PatentUS20250347999A1Photoresist compositions, and methods of manufacturing semiconductor devices using the same

Publication Date: 2025.11.13 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a photoresist composition including a photosensitive polymer having a main chain including a polyester group, a photoacid generator (PAG), and a solvent. Photoresist compositions may also include a photo-decomposable quencher. Methods of manufacturing semiconductor devices comprising a photoresist composition are also provided, which can be devoid of a developing process.