Polishing Composition Using Polyether Amine for Sapphire Substrates
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Solution Overview
Problem
Current chemical-mechanical polishing compositions lack controlled selectivity for polysilicon relative to silicon oxide and silicon nitride, leading to decreased polishing rates and inefficiencies in semiconductor processing.
Innovation Solution
A chemical-mechanical polishing system utilizing a polishing pad or abrasive with a liquid carrier and specific polyether amines, such as 4,7,10-trioxa-1,13-tridecanediamine, to adjust polysilicon removal rates while maintaining low removal rates for silicon oxide and silicon nitride, using compounds like tetramethylammonium hydroxide to enhance selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions (slurries or gels) are used for polishing sapphire substrates, then the polishing process can proceed, but the polishing speed is insufficient and cannot meet industrial production requirements
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing slurry by incorporating polyether amine and adjusting the concentration of colloidal silica and hydrogen peroxide. This chemical parameter modification enables significantly higher polishing speeds while maintaining consistent polishing quality, directly resolving the contradiction between productivity and reliability
Solution Approach 2:
The patent creates a composite polishing slurry system combining polyether amine, colloidal silica, and hydrogen peroxide. This composite formulation synergistically enhances both polishing speed and consistency, achieving industrial production requirements by integrating multiple functional components that work together to overcome the limitations of conventional single-component slurries
2Productivity
If conventional polishing compositions are used, then the formulation is simple, but the polishing speed is too slow for industrial production
Solution Approach 1:
The patent modifies the chemical composition parameters by adding polyether amine to the slurry formulation. This parameter change dramatically increases polishing speed to meet industrial requirements, accepting a moderate increase in composition complexity as a necessary trade-off for achieving productive polishing rates
Solution Approach 2:
The patent introduces polyether amine as an intermediary substance that mediates between the abrasive particles and the sapphire substrate. This intermediary component enhances the chemical-mechanical polishing action, enabling high-speed polishing while keeping the overall formulation relatively simple and manageable
3Stability of the object's composition
If conventional polishing compositions are used, then the formulation is straightforward, but uniformity of polishing across different batches cannot be ensured
Solution Approach 1:
The patent establishes specific parameter ranges for polyether amine concentration (0.1-10 wt%), colloidal silica concentration (10-50 wt%), and hydrogen peroxide concentration (1-20 wt%). These controlled parameter changes ensure both high polishing speed and uniformity across different batches, resolving the contradiction between productivity and composition stability
Solution Approach 2:
The patent optimizes the local chemical environment at the polishing interface by carefully controlling the distribution and concentration of polyether amine and other components. This local quality control ensures consistent polishing performance across different batches while maintaining high productivity, addressing both uniformity and speed requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system allows for controlled adjustment of polysilicon removal rates while minimizing the removal of silicon oxide and silicon nitride, optimizing semiconductor substrate processing and improving throughput.
Implementation Method 1
chemical-mechanical polishing
Data Source
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AI summary
The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.