Polyether-Modified Organopolysiloxane Oxidation Resistance
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Solution Overview
Problem
Polyoxyalkylene-modified organopolysiloxanes are susceptible to oxidation in air, leading to the production of allergenic oxidation products like formaldehyde, which compromises their stability and environmental compatibility during storage.
Innovation Solution
Development of polyether-modified organopolysiloxanes and diorganopolysiloxane-polyether block copolymers that replace the silicon-bonded polyoxyalkylene chain with a polyglycidyl ether or glycidyl ether/alkylene oxide copolymer, reducing oxidation and the formation of allergenic compounds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If polyoxyalkylene-modified organopolysiloxanes are used, then they provide good cosmetic performance and functionality, but they are susceptible to oxidation in air and produce allergenic oxidation products like formaldehyde during storage
Solution Approach 1:
The patent changes the chemical structure parameters of the polyether component from polyoxyalkylene to polyglycidyl ether or glycidyl ether/alkylene oxide copolymer. This structural parameter change fundamentally alters the oxidation resistance properties, preventing the formation of allergenic carbonyl compounds while maintaining cosmetic functionality.
Solution Approach 2:
The patent creates composite polymer structures by combining organopolysiloxane backbones with polyglycidyl ether side chains. This composite material approach integrates the oxidation resistance of the siloxane backbone with the functional properties of the modified polyether side chains, achieving both stability and performance.
2Reliability
If polyglycidyl ether or glycidyl ether/alkylene oxide copolymer is used instead of polyoxyalkylene chain, then oxidation resistance is enhanced, but the molecular structure becomes more complex
Solution Approach 1:
The patent applies local quality modification by introducing polyglycidyl ether side chains at specific positions on the organopolysiloxane backbone. This localized structural modification provides oxidation resistance at the critical polyether-siloxane interface while maintaining the simplicity of the overall molecular architecture and backbone structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new polyether-modified organopolysiloxanes and diorganopolysiloxane-polyether block copolymers exhibit enhanced resistance to oxidation, preventing the production of allergenic compounds and ensuring higher environmental compatibility and stability during storage.
Implementation Method 1
novel polyether-modified organopolysiloxanes and novel diorganopolysiloxane-polyether block copolymers that are more resistant to oxidation in the presence of air than the heretofore known polyoxyalkylene-modified organopolysiloxanes
Data Source
Figure 1~2

AI summary
(Problem) To provide a novel polyether-modified organopolysiloxane and a novel diorganopolysiloxane-polyether block copolymer that are more resistant to oxidation than the heretofore existing polyoxyalkylene-modified organopolysiloxanes and that are thus more resistant to producing allergenically antigenic oxidation products during elapsed time in storage. Also, to provide methods of producing this novel polyether-modified organopolysiloxane and novel diorganopolysiloxane-polyether block copolymer. (Solution) Organopolysiloxane that is modified by silicon-bonded polyglycidyl ether or glycidyl ether/alkylene oxide copolymer; diorganopolysiloxane-polyglycidyl ether block copolymer; a method of producing the preceding by a hydrosilylation reaction between organohydrogenpolysiloxane and polyglycidyl ether having a terminal double bond or a glycidyl ether/alkylene oxide copolymer having a terminal double bond; and a cosmetic that contains this modified organopolysiloxane or diorganopolysiloxane-polyglycidyl ether block copolymer.