Polyhedral Silsesquioxane Cleaning Composition for Nano Particle Removal

Solution Overview

Problem

Current semiconductor cleaning compositions are ineffective in removing nano-sized particles from semiconductor substrates without damaging the surfaces, as they either fail to remove these particles or cause damage during the cleaning process, especially as device dimensions continue to shrink.

Innovation Solution

A composition comprising a water-soluble metal ion-free onium salt of polyhedral silsesquioxane, combined with a base and an oxidizing agent in a high pH solution, which enhances the zeta potential for effective particle removal without etching semiconductor surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If known semiconductor cleaning compositions (such as SC-1) are used, then the cleaning process is simple and well-established, but they are not capable of removing nano particles effectively

Engineering Contradiction:
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical parameters of the cleaning composition by using a quaternary ammonium salt of a silicate ester with specific molecular weight (500-5000) and controlled hydrolysis conditions. This creates a cleaning solution that generates sufficient stress to remove nano particles while controlling the chemical environment to prevent surface damage, resolving the contradiction between removal efficiency and surface integrity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses a composite cleaning composition comprising a quaternary ammonium salt of a silicate ester combined with specific additives and controlled hydrolysis products. This composite formulation provides both the mechanical stress needed for particle removal and the chemical protection needed to preserve semiconductor surfaces, simultaneously achieving high particle removal efficiency and surface damage prevention

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If stronger cleaning agents are used to remove nano particles, then particle removal efficiency improves, but damage to semiconductor surfaces and structures increases

Engineering Contradiction:
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent optimizes parameters including the molecular weight of the silicate ester (500-5000), the concentration of quaternary ammonium salt (0.1-10 wt%), and hydrolysis conditions (pH 7-14, temperature 20-100°C). These parameter changes create a cleaning solution that generates adequate stress for particle removal while maintaining chemical conditions that protect semiconductor surfaces from damage

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The cleaning composition exhibits local quality by having different functional components: the quaternary ammonium salt provides cationic charge for particle interaction, the silicate ester provides the cleaning mechanism, and additives provide surface protection. This localized functionality allows different parts of the cleaning system to perform different functions - particle removal and surface protection simultaneously

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves damage-free removal of nano particles from semiconductor surfaces by increasing the zeta potential, ensuring efficient cleaning while minimizing surface damage, suitable for next-generation ULSI device dimensions.

Implementation Method 1

High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Methodology Applied
Scientific EffectZeta potential: Electrostatics

Data Source

PatentUS7976638B2High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
Publication Date: 2011.07.12
  • US7976638B2 patent drawing
  • US7976638B2 patent drawing
  • US7976638B2 patent drawing

AI summary

A composition for removing particulate matter from integrated circuit substrates, including (a) one or more metal ion-free base; (b) a water-soluble metal ion-free onium salt of a polyhedral silsesquioxane; (c) an oxidizing agent; and (d) metal ion-free water, and a composition obtained by combining ingredients including (a), (b), (c) and (d). A process for removing particulate matter from a surface of an integrated circuit device, including applying to the surface the composition including (a), (b), (c) and (d) or applying to the surface the composition obtained by combining ingredients including (a), (b), (c) and (d).