Polyhedron with Narrower Upper Width for Photoelectric Conversion

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Solution Overview

Problem

Current photoelectric conversion devices, such as solar cells and light-emitting diodes, do not achieve satisfactory efficiency improvements using nanowires.

Innovation Solution

A photoelectric conversion device is designed with a substrate featuring a polyhedron having a smaller upper width than lower width, with a semiconductor layer epitaxially grown on the polyhedron, which includes multiple crystal facets and a sharp vertex or edge, and electrodes connected to the semiconductor layers, enhancing light absorption and extraction efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If nanowires are used to improve photoelectric conversion efficiency, then light absorption is enhanced, but the efficiency improvement is not satisfied

Engineering Contradiction:
Improvephotoelectric conversion efficiencyVSAvoidefficiency satisfaction
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent employs polyhedral structures with curved crystal facets instead of straight nanowires. The polyhedron comprises multiple crystal facets with different orientations, creating a curved, multi-faceted surface that enhances light scattering and absorption while maintaining structural stability, thereby achieving satisfactory efficiency improvement

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The invention transitions from one-dimensional nanowires to three-dimensional polyhedral structures. The polyhedron includes multiple crystal facets extending in different spatial dimensions, creating a more complex light interaction pathway that significantly improves photoelectric conversion efficiency beyond what simple nanowires can achieve

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If polyhedron with multiple crystal facets is used, then light scattering effect is enhanced, but device complexity increases

Engineering Contradiction:
Improvelight scattering effectVSAvoidstructure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent utilizes asymmetric polyhedral structures where different crystal facets have different areas and orientations. This asymmetry creates varied light scattering angles and paths, enhancing the light scattering effect while the polyhedral geometry itself provides structural stability without requiring additional support components

Inventive Principle:
Principle #4Asymmetry

3Productivity

If polyhedron with sharp vertex or edge is used, then light extraction efficiency is enhanced, but manufacturing precision requirements increase

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidvertex sharpness precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent achieves sharp vertices and edges through controlled epitaxial growth parameters rather than post-processing. By adjusting temperature, pressure, and precursor ratios during the epitaxial process, the polyhedron naturally forms with sharp features that enhance light extraction while avoiding the need for high-precision mechanical machining

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device exhibits improved photoelectric conversion efficiency due to increased surface area and light scattering effects, maintaining efficiency across varying light angles and enhancing light extraction in light-emitting diodes.

Implementation Method 1

The device exhibits improved photoelectric conversion efficiency due to increased surface area and light scattering effects

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 2

A semiconductor layer is disposed on the polyhedron... the semiconductor layer may be an epitaxial layer

Methodology Applied
Scientific EffectEpitaxy: Epitaxy

Data Source

PatentUS10763111B2Polyhedron of which upper width is narrower than lower width, manufacturing method therefor, and photoelectric conversion device comprising same
Publication Date: 2020.09.01 INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
  • US10763111B2 patent drawing
  • US10763111B2 patent drawing
  • US10763111B2 patent drawing

AI summary

Provided are a polyhedron of which the upper width is narrower than the lower width, a manufacturing method therefor, and a photoelectric conversion device comprising the same. The photoelectric conversion device comprises: a substrate; a polyhedron disposed on the substrate and of which the upper width is narrower than the lower width; and a semiconductor layer disposed on the polyhedron. The photoelectric conversion device to which the polyhedron, of which the upper width is narrower than the lower width, is applied can have improved photoelectric conversion efficiency due to structural characteristics of the polyhedron.