Heat-Resistant Polyimide Cleaning Substrate for Semiconductor Vacuum Integrity
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Solution Overview
Problem
Existing cleaning substrates for semiconductor and HDD applications face challenges due to silicone contamination and inadequate thermal resistance, particularly in high-temperature processes, which affects their cleaning efficiency and vacuum stability.
Innovation Solution
A cleaning substrate with a heat-resistant resin layer, composed of a polyimide resin formed by polymerizing tetracarboxylic dianhydride and a compound containing a polyether structure and terminal amine structures, offering improved thermal resistance and low elastic modulus, thus preventing silicone contamination and maintaining vacuum integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If silicone-containing diamine or tetracarboxylic anhydride is used to obtain lowly elastic polyimide, then the polyimide has low stress and thermal resistance suitable for protective films, but it generates serious silicone contamination in HDD and semiconductor applications
Solution Approach 1:
The invention extracts and removes the silicone-containing components (silicone-containing diamine or tetracarboxylic anhydride) from the polyimide synthesis process. By using non-silicone-containing raw materials, the patent eliminates the source of silicone contamination while maintaining the desired low elasticity and thermal resistance properties of the polyimide film.
Solution Approach 2:
The invention changes the chemical composition parameters of the polyimide by selecting specific non-silicone-containing diamine and tetracarboxylic anhydride components. This parameter change allows the polyimide to maintain its low elasticity and thermal resistance while eliminating silicone contamination, resolving the contradiction between thermal performance and contamination control.
2Ease of manufacture
If synthetic resin sheets such as acrylic resin are used in cleaning substrates, then the substrate can be manufactured, but the thermal resistance at the pre-processing step is insufficient for high-temperature applications
Solution Approach 1:
The invention uses a composite structure consisting of a substrate and a polyimide cleaning layer. The polyimide material provides the necessary thermal resistance for high-temperature pre-processing steps, while the composite structure maintains ease of manufacture. This resolves the contradiction between manufacturability and thermal performance by selecting appropriate materials and structure.
3Reliability
If a cleaning substrate is used for dusting in semiconductor apparatus, then cleaning ability is achieved, but the time period required for achieving vacuum is extended due to inadequate thermal resistance
Solution Approach 1:
The invention changes the material parameters by using polyimide with specific low elasticity and high thermal resistance properties. This material selection allows the cleaning substrate to maintain its cleaning ability while rapidly achieving vacuum conditions, as the polyimide does not outgas excessively at high temperatures. This resolves the contradiction between cleaning performance and vacuum recovery time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat-resistant resin layer provides efficient cleaning and dust-proofing capabilities across a wide temperature range, ensuring rapid vacuum recovery and preventing silicone contamination, making it suitable for high-temperature semiconductor processes without compromising vacuum quality.
Implementation Method 1
a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa
Implementation Method 2
heat resistant resins with low elasticity, being usable with no generation of contamination in production apparatuses of HDD and semiconductors
Data Source
AI summary
The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.