Polyimide Redistribution Dielectric for Low-Loss Semiconductor Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and efficient packaging techniques for semiconductor dies, particularly in creating smaller and more complex packaging systems like Package-on-Package (PoP) technology.
Innovation Solution
The use of a polyimide material to form dielectric layers within semiconductor devices, which involves a process of forming a polymer precursor, applying it over a substrate, exposing and developing it, and curing it to create a dielectric layer with specific properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional packaging techniques are used, then device functionality is maintained, but integration density and component density are limited
Solution Approach 1:
The patent implements Package-on-Package (PoP) technology where a top semiconductor package is stacked on top of a bottom semiconductor package, creating a nested three-dimensional structure that increases integration density without increasing footprint area
2Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical stacking by implementing PoP architecture, allowing continued component density improvement without further reducing minimum feature size in the planar dimension
3Loss of energy
If polymer material is used to form dielectric layers, then device insertion loss is reduced and thermal stability is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent changes the material parameter by using polyimide dielectric layers with specific properties (low dissipation factor, high thermal stability) to reduce device insertion loss while maintaining manufacturing feasibility through established polymer deposition and curing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the reduction of device insertion loss, improves the rigidity of the dielectric layer, and enhances the adhesion and thermal stability, ultimately supporting the creation of more compact and efficient semiconductor packages.
Implementation Method 1
curing the polymer material at a temperature in a range of 200° C. to 300° C.
Implementation Method 2
The polymer material includes a polymer precursor, the polymer precursor including a photosensitizer
Data Source
AI summary
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.